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Nucleation and growth behavior during initial stage in sublimation epitaxy of SiC films on 6H-SiC(0001) substrate
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 박진석 | - |
| dc.date.accessioned | 2021-06-23T05:28:47Z | - |
| dc.date.available | 2021-06-23T05:28:47Z | - |
| dc.date.issued | 2004-04-16 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/30689 | - |
| dc.title | Nucleation and growth behavior during initial stage in sublimation epitaxy of SiC films on 6H-SiC(0001) substrate | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | ICMCTF 2004 | - |
| dc.citation.conferencePlace | San Diego | - |
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Related Researcher
- PARK, JIN SEOK
- ERICA 공학대학 (SCHOOL OF ELECTRICAL ENGINEERING)