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Dip-shaped AlGaN/AlN quantum well structures with high TE-polarized optical gain
- Authors
- Park, Seoung-Hwan; Shim, Jong In
- Issue Date
- Jul-2013
- Publisher
- IEEE
- Citation
- Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest, pp.1 - 2
- Indexed
- SCOPUS
- Journal Title
- Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest
- Start Page
- 1
- End Page
- 2
- Abstract
- Optical gain characteristics of dip-shaped AlGaN/AlN quantum well (QW) structures in deep-ultraviolet (UV) spectral region were investigated using non-Markovian model with the many-body effect. For a high Al composition of 0.85, the conventional AlGaN/AlN QW structure shows that TM-polarization is dominant. On the other hand, with the inclusion of the lower bandgap AlGaN layer, the polarization property changes from TM-polarization to TE-polarization with a small wavelength change. © 2013 IEEE.
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Related Researcher
- Shim, Jong In
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY (DEPARTMENT OF PHOTONICS AND NANOELECTRONICS)