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Numerical investigation of light extraction efficiency in AlGaN deep ultraviolet light-emitting diodes
- Authors
- Ryu, Han-Youl; Choi, Il-Gyun; Choi, Hyo-Sik; Shim, Jong In
- Issue Date
- Jul-2013
- Publisher
- IEEE
- Citation
- Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest, pp 1 - 2
- Pages
- 2
- Indexed
- SCOPUS
- Journal Title
- Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest
- Start Page
- 1
- End Page
- 2
- Abstract
- Light extraction efficiency (LEE) in AlGaN deep ultraviolet (UV) light-emitting diodes (LEDs) is investigated using finite-difference time-domain simulations. For flip-chip LED structures, LEE is obtained to be <10% due to strong UV light absorption in the p-GaN layer. In addition, LEE of transverse-magnetic (TM) modes is found to be more than ten times smaller than that of transverse-electric (TE) modes, which explains the decreasing behavior of external quantum efficiency of UV LEDs with decreasing wavelengths. © 2013 IEEE.
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Related Researcher
- Shim, Jong In
- ERICA 첨단융합대학 (ERICA 반도체·디스플레이공학전공)