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Investigation of light extraction efficiency in AlGaN deep ultraviolet LEDs using FDTD simulations
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Ryu, Han-Youl | - |
| dc.contributor.author | Shim, Jong In | - |
| dc.date.accessioned | 2021-06-23T05:42:40Z | - |
| dc.date.available | 2021-06-23T05:42:40Z | - |
| dc.date.issued | 2013-08 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/30918 | - |
| dc.description.abstract | Light extraction efficiency (LEE) in AlGaN deep ultraviolet (UV) light-emitting diodes (LEDs) is investigated using three-dimensional finite-difference time-domain simulations. For flip-chip LED structures, LEE is obtained to be <10% due to strong UV light absorption in the p-GaN layer. In addition, LEE of transverse-magnetic (TM) modes is found to be more than ten times smaller than that of transverse-electric (TE) modes, which explains the decreasing behavior of external quantum efficiency of UV LEDs with decreasing wavelengths. © 2013 IEEE. | - |
| dc.format.extent | 2 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | IEEE | - |
| dc.title | Investigation of light extraction efficiency in AlGaN deep ultraviolet LEDs using FDTD simulations | - |
| dc.type | Article | - |
| dc.publisher.location | 미국 | - |
| dc.identifier.doi | 10.1109/NUSOD.2013.6633151 | - |
| dc.identifier.scopusid | 2-s2.0-84890467068 | - |
| dc.identifier.bibliographicCitation | 13th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2013, pp 115 - 116 | - |
| dc.citation.title | 13th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2013 | - |
| dc.citation.startPage | 115 | - |
| dc.citation.endPage | 116 | - |
| dc.type.docType | Conference Paper | - |
| dc.description.isOpenAccess | Y | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.subject.keywordPlus | Deep ultraviolet LED | - |
| dc.subject.keywordPlus | External quantum efficiency | - |
| dc.subject.keywordPlus | FDTD simulations | - |
| dc.subject.keywordPlus | Light extraction efficiency (LEE) | - |
| dc.subject.keywordPlus | Light-extraction efficiency | - |
| dc.subject.keywordPlus | Three dimensional finite difference time domains | - |
| dc.subject.keywordPlus | Transverse electric modes | - |
| dc.subject.keywordPlus | Transverse-magnetic mode | - |
| dc.subject.keywordPlus | Computer simulation | - |
| dc.subject.keywordPlus | Numerical models | - |
| dc.subject.keywordPlus | Optoelectronic devices | - |
| dc.subject.keywordPlus | Light emitting diodes | - |
| dc.identifier.url | https://ieeexplore.ieee.org/document/6633151 | - |
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- Shim, Jong In
- ERICA 첨단융합대학 (ERICA 반도체·디스플레이공학전공)