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Growth of highly-oriented diamond films on 6H-SiC(0001) and Si(111) substrates and the effects of carburization

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dc.contributor.author박진석-
dc.date.accessioned2021-06-23T06:08:43Z-
dc.date.available2021-06-23T06:08:43Z-
dc.date.issued2003-04-28-
dc.identifier.urihttps://scholarworks.bwise.kr/erica/handle/2021.sw.erica/31457-
dc.titleGrowth of highly-oriented diamond films on 6H-SiC(0001) and Si(111) substrates and the effects of carburization-
dc.typeConference-
dc.citation.conferenceNameICMCTF 2003-
dc.citation.conferencePlaceSan Diego, USA-
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COLLEGE OF ENGINEERING SCIENCES > SCHOOL OF ELECTRICAL ENGINEERING > 2. Conference Papers

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PARK, JIN SEOK
ERICA 공학대학 (SCHOOL OF ELECTRICAL ENGINEERING)
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