Threshold Energy Resist Model for CD Prediction

Abstract

The threshold resist model based on only aerial image is less time consuming and is more efficient than the full simulation model based on mathematically analyzing the whole complicated process of photolithography. But this model still contains a disadvantage that the preditions is limited in various situations. In this paper, the new threshold resist model to predict the Critical Dimension (CD) on the wafer is presented. This model intensity and its slope. More than 90% of prediction accuracy in various patterns with respect to pattern sizes is obtained by using the new model for 248nm