Synthesis and thermoelectric/electrical characterization of electrodeposited SbxTey thin films
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lim, Jae-Hong | - |
dc.contributor.author | Park, MiYeong | - |
dc.contributor.author | Lim, Dong-Chan | - |
dc.contributor.author | Myung, Nosang V. | - |
dc.contributor.author | Lee, Jung-Ho | - |
dc.contributor.author | Jeong, Young-Keun | - |
dc.contributor.author | Yoo, Bong Young | - |
dc.contributor.author | Lee, Kyu Hwan | - |
dc.date.accessioned | 2021-06-23T06:26:25Z | - |
dc.date.available | 2021-06-23T06:26:25Z | - |
dc.date.issued | 2012-10 | - |
dc.identifier.issn | 0025-5408 | - |
dc.identifier.issn | 1873-4227 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/31814 | - |
dc.description.abstract | SbxTey films were potentiostatically electrodeposited from acidic nitric baths at room temperature by controlling the applied potential. Near-stoichiometric Sb2Te3 thin films were obtained at applied potentials between -0.15 and -0.30 V vs. saturated calomel electrode (SCE). Post-annealing in a reducing environment resulted in an improvement in the crystal structure without the evaporation of the Te element. This result was indicated by a significant reduction in the electrical resistance and decrease in the FWHM of the main diffraction peaks. The power factor (sigma S-2) increased from 44.2 to 372.1 mu W/m K-2 after annealing at 473 K. (C) 2012 Elsevier Ltd. All rights reserved. | - |
dc.format.extent | 4 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | Pergamon Press Ltd. | - |
dc.title | Synthesis and thermoelectric/electrical characterization of electrodeposited SbxTey thin films | - |
dc.type | Article | - |
dc.publisher.location | 영국 | - |
dc.identifier.doi | 10.1016/j.materresbull.2012.04.140 | - |
dc.identifier.scopusid | 2-s2.0-84866330470 | - |
dc.identifier.wosid | 000309801800011 | - |
dc.identifier.bibliographicCitation | Materials Research Bulletin, v.47, no.10, pp 2748 - 2751 | - |
dc.citation.title | Materials Research Bulletin | - |
dc.citation.volume | 47 | - |
dc.citation.number | 10 | - |
dc.citation.startPage | 2748 | - |
dc.citation.endPage | 2751 | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | sci | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | ANTIMONY TELLURIDE | - |
dc.subject.keywordPlus | SB2TE3 NANOFILMS | - |
dc.subject.keywordPlus | BI2TE3 | - |
dc.subject.keywordAuthor | Thin films | - |
dc.subject.keywordAuthor | Crystal structure | - |
dc.subject.keywordAuthor | Electrical properties | - |
dc.subject.keywordAuthor | Microstructure | - |
dc.subject.keywordAuthor | Semiconductivity | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0025540812003443?via%3Dihub | - |
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