Time-resolved photoluminescence studies of the optical quality of InGaN/GaN multi-quantum well grown by MOCVD-antimony surfactant effect

Abstract

The influence of antimony on the optical quality of InGaN/GaN multi-quantum well (MQW) grown by metalorganic chemical vapor deposition has been investigated by means of photoluminescence and time-resolved photoluminescence for a set of samples obtained for the Sb/(In+Ga) flow ratio varying from 0% to 0.12%. It has been observed that by using proper Sb flow it is possible to improve the optical properties of InGaN/GaN MQWs; however, too large Sb flows cause their optical quality to deteriorate. The Sb-related improvement of optical properties has been observed as (i) similar to 30% increase of PL intensity, (ii) reduction of temperature-induced photoluminescence quenching and (iii) elongation of PL decay time by 30%. The atomic force microscopy study and second ion mass spectrometry profiles show that optical quality improvement is connected with surfactant properties of antimony.