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Strain relaxation caused by defects in InGaN-based multiple-quantum-well near-ultraviolet light-emitting diodes investigated by macroscopic characterization
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 신동수 | - |
| dc.date.accessioned | 2021-06-22T10:05:18Z | - |
| dc.date.available | 2021-06-22T10:05:18Z | - |
| dc.date.issued | 2020-02-06 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/3194 | - |
| dc.title | Strain relaxation caused by defects in InGaN-based multiple-quantum-well near-ultraviolet light-emitting diodes investigated by macroscopic characterization | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | SPIE Photonics West 2020 | - |
| dc.citation.conferencePlace | San Francisco, USA | - |
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Related Researcher
- Shin, Dong Soo
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY (DEPARTMENT OF PHOTONICS AND NANOELECTRONICS)