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실리콘 산화아연 박막트랜지스터의 제작 및 특성 분석
Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 이상혁 | - |
| dc.contributor.author | 김원 | - |
| dc.contributor.author | 엄현석 | - |
| dc.contributor.author | 박진석 | - |
| dc.date.accessioned | 2021-06-23T06:55:28Z | - |
| dc.date.available | 2021-06-23T06:55:28Z | - |
| dc.date.issued | 2012-07 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/32256 | - |
| dc.description.abstract | Transparent thin film transistors (TFTs) using silicon zinc oxide (SZO) films as an active channel. The SZO films were deposited at room temperature via radio frequency magnetron sputtering by attaching a boron-doped silicon chip to the target. The effects of the gas flow ratio of O2/Ar and thermal annealing on the electrical characteristics of SZO-TFTs were extensively investigated. The structure and transmittance of SZO films were also characterized by X-ray diffraction (XRD) and UV/Vis spectrometer. | - |
| dc.format.extent | 2 | - |
| dc.language | 한국어 | - |
| dc.language.iso | KOR | - |
| dc.publisher | 대한전기학회 | - |
| dc.title | 실리콘 산화아연 박막트랜지스터의 제작 및 특성 분석 | - |
| dc.title.alternative | Fabrication and characterization of silicon zinc oxide thin film transistors | - |
| dc.type | Article | - |
| dc.publisher.location | 대한민국 | - |
| dc.identifier.bibliographicCitation | 2012년도 대한전기학회 하계학술대회 논문집, pp 1036 - 1037 | - |
| dc.citation.title | 2012년도 대한전기학회 하계학술대회 논문집 | - |
| dc.citation.startPage | 1036 | - |
| dc.citation.endPage | 1037 | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | other | - |
| dc.identifier.url | https://www.dbpia.co.kr/journal/articleDetail?nodeId=NODE01915784 | - |
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Related Researcher
- PARK, JIN SEOK
- ERICA 공학대학 (SCHOOL OF ELECTRICAL ENGINEERING)