Impact of ozone concentration on atomic layer deposited HfO2 on GaAs
DC Field | Value | Language |
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dc.contributor.author | Chung, Keum-jee | - |
dc.contributor.author | Park, Tae-joo | - |
dc.contributor.author | Sivasubramani, Prasanna | - |
dc.contributor.author | Kim, Jiyoung | - |
dc.contributor.author | Ahn, Jinho | - |
dc.date.accessioned | 2021-06-23T08:07:35Z | - |
dc.date.available | 2021-06-23T08:07:35Z | - |
dc.date.created | 2021-01-21 | - |
dc.date.issued | 2012-01 | - |
dc.identifier.issn | 0167-9317 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/33926 | - |
dc.description.abstract | Effect of ozone (O-3) concentration (90, 300 g/Nm(3)) on atomic layer deposition of HfO2 thin films on GaAs wafers using tetrakis (dimethylamino)hafnium (TDMAHf as Hf precursor was systematically studied including MISCAP performance and related microstructure. High-resolution transmission electron microscopy analyses show that oxidation of the GaAs substrate enhances with O-3 concentration which leads to an increase in interfacial layer (IL) thickness between the high-k dielectric and the substrate. The thin IL was maintained after PDA, while the high-k (HfO2) layer experienced shrinkage of similar to 12% due to densification. However HfO2 film deposited using O-3 concentration of 300 g/Nm(3) produced relatively thicker IL and thinner high-k layer which both did not show a noticeable change after PDA. This led to C-max variations depending on the different O-3 concentration. In the case of O-3 concentration of 90 g/Nm(3), increase of leakage current density by an order was observed and corresponding microstructural change is discussed. (C) 2011 Elsevier B.V. All rights reserved. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | Elsevier BV | - |
dc.title | Impact of ozone concentration on atomic layer deposited HfO2 on GaAs | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Tae-joo | - |
dc.identifier.doi | 10.1016/j.mee.2011.03.150 | - |
dc.identifier.scopusid | 2-s2.0-81855182167 | - |
dc.identifier.wosid | 000299407000021 | - |
dc.identifier.bibliographicCitation | Microelectronic Engineering, v.89, no.1, pp.80 - 83 | - |
dc.relation.isPartOf | Microelectronic Engineering | - |
dc.citation.title | Microelectronic Engineering | - |
dc.citation.volume | 89 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 80 | - |
dc.citation.endPage | 83 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Optics | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Optics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | AL2O3 | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | H2O | - |
dc.subject.keywordAuthor | Atomic layer deposition | - |
dc.subject.keywordAuthor | Hafnium oxide | - |
dc.subject.keywordAuthor | Gallium arsenide | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0167931711004096?via%3Dihub | - |
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