High electron mobility transistors with Fe-doped semi-insulating GaN buffers on (110) Si substrates grown by ammonia molecular beam epitaxy
DC Field | Value | Language |
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dc.contributor.author | Noh, Young-Kyun | - |
dc.contributor.author | Lee, Sang-Tae | - |
dc.contributor.author | Kim, Moon-Deock | - |
dc.contributor.author | Oh, Jae-Eung | - |
dc.date.accessioned | 2021-06-22T10:21:55Z | - |
dc.date.available | 2021-06-22T10:21:55Z | - |
dc.date.created | 2021-01-21 | - |
dc.date.issued | 2019-03 | - |
dc.identifier.issn | 0022-0248 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/3434 | - |
dc.description.abstract | The electrical properties of AlGaN/GaN high electron mobility transistor structures with composite Fe-doped GaN/undoped GaN buffers grown on (1 1 0) Si substrates by ammonia molecular beam epitaxy were reported. Fe concentration in the range of 10(17) cm(-3) is sufficient to compensate the residual donors (< 10(16) cm(-3) ) of undoped GaN and demonstrated a highly resistive GaN on (1 1 0) Si substrates. For buffers with Fe concentration of 1 x 10(17) similar to 1 x 10(18) cm(-3), the buffer was semi-insulating, with the Fermi level pinned near 0.5-0.7 eV which is determined by temperature-dependent I-T measurements. From the PICTS measurements, the Fe-related peaks of 0.69 eV (B) and 0.86 eV (C) are observed. The peak B is most likely due to the center pinning the Fermi level which is close to the activation energy observed in the temperature-dependent current measurement of Fe-doped sample, tentatively attributed to complexes between substitutional Fe ions and native defects such as nitrogen vacancies. The peak C is similar to the hole trap of 0.85 eV previously reported. In spite of similar transfer device characteristics, the Fe-doped buffer shows a noticeable difference in the off-state leakage behaviors. The sample grown with the optimized Fe concentration of 1 x 10(17) cm(-3) had a buffer resistivity of approximately 3.84 x 10(11)Omega cm, increased by almost four orders of magnitude with respect to that (4.5 x 10(7) Omega cm) of the reference sample with undoped GaN buffer. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.title | High electron mobility transistors with Fe-doped semi-insulating GaN buffers on (110) Si substrates grown by ammonia molecular beam epitaxy | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Oh, Jae-Eung | - |
dc.identifier.doi | 10.1016/j.jcrysgro.2018.07.016 | - |
dc.identifier.scopusid | 2-s2.0-85060111086 | - |
dc.identifier.wosid | 000456160000024 | - |
dc.identifier.bibliographicCitation | JOURNAL OF CRYSTAL GROWTH, v.509, pp.141 - 145 | - |
dc.relation.isPartOf | JOURNAL OF CRYSTAL GROWTH | - |
dc.citation.title | JOURNAL OF CRYSTAL GROWTH | - |
dc.citation.volume | 509 | - |
dc.citation.startPage | 141 | - |
dc.citation.endPage | 145 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Crystallography | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Crystallography | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | ALGAN/GAN | - |
dc.subject.keywordPlus | CARBON | - |
dc.subject.keywordAuthor | Characterization | - |
dc.subject.keywordAuthor | Doping | - |
dc.subject.keywordAuthor | Molecular beam epitaxy | - |
dc.subject.keywordAuthor | Nitrides | - |
dc.subject.keywordAuthor | Semiconducting III-V materials | - |
dc.subject.keywordAuthor | Heterojunction semiconductor devices | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0022024818303221?via%3Dihub | - |
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