High electron mobility transistors with Fe-doped semi-insulating GaN buffers on (110) Si substrates grown by ammonia molecular beam epitaxy
- Authors
- Noh, Young-Kyun; Lee, Sang-Tae; Kim, Moon-Deock; Oh, Jae-Eung
- Issue Date
- Mar-2019
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- Characterization; Doping; Molecular beam epitaxy; Nitrides; Semiconducting III-V materials; Heterojunction semiconductor devices
- Citation
- JOURNAL OF CRYSTAL GROWTH, v.509, pp.141 - 145
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF CRYSTAL GROWTH
- Volume
- 509
- Start Page
- 141
- End Page
- 145
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/3434
- DOI
- 10.1016/j.jcrysgro.2018.07.016
- ISSN
- 0022-0248
- Abstract
- The electrical properties of AlGaN/GaN high electron mobility transistor structures with composite Fe-doped GaN/undoped GaN buffers grown on (1 1 0) Si substrates by ammonia molecular beam epitaxy were reported. Fe concentration in the range of 10(17) cm(-3) is sufficient to compensate the residual donors (< 10(16) cm(-3) ) of undoped GaN and demonstrated a highly resistive GaN on (1 1 0) Si substrates. For buffers with Fe concentration of 1 x 10(17) similar to 1 x 10(18) cm(-3), the buffer was semi-insulating, with the Fermi level pinned near 0.5-0.7 eV which is determined by temperature-dependent I-T measurements. From the PICTS measurements, the Fe-related peaks of 0.69 eV (B) and 0.86 eV (C) are observed. The peak B is most likely due to the center pinning the Fermi level which is close to the activation energy observed in the temperature-dependent current measurement of Fe-doped sample, tentatively attributed to complexes between substitutional Fe ions and native defects such as nitrogen vacancies. The peak C is similar to the hole trap of 0.85 eV previously reported. In spite of similar transfer device characteristics, the Fe-doped buffer shows a noticeable difference in the off-state leakage behaviors. The sample grown with the optimized Fe concentration of 1 x 10(17) cm(-3) had a buffer resistivity of approximately 3.84 x 10(11)Omega cm, increased by almost four orders of magnitude with respect to that (4.5 x 10(7) Omega cm) of the reference sample with undoped GaN buffer.
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