Enhanced Radiative Recombination Rate by Local Potential Fluctuation in InGaN/AlGaN Near-Ultraviolet Light-Emitting Diodes
DC Field | Value | Language |
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dc.contributor.author | Islam, Abu Bashar Mohammad Hamidul | - |
dc.contributor.author | Shin, Dong-Soo | - |
dc.contributor.author | Shim, Jong-In | - |
dc.date.accessioned | 2021-06-22T10:21:57Z | - |
dc.date.available | 2021-06-22T10:21:57Z | - |
dc.date.issued | 2019-03 | - |
dc.identifier.issn | 2076-3417 | - |
dc.identifier.issn | 2076-3417 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/3437 | - |
dc.description.abstract | We investigate the differences in optoelectronic performances of InGaN/AlGaN multiple-quantum-well (MQW) near-ultraviolet light-emitting diodes by using samples with different indium compositions. Various macroscopic characterizations have been performed to show that the strain-induced piezoelectric field (F-pz), the crystal quality, and the internal quantum efficiency increase with the sample's indium composition. This improved performance is owing to the carrier recombination at relatively defect-free indium-rich localized sites, caused by the local in-plane potential-energy fluctuation in MQWs. The potential-energy fluctuation in MQWs are considered to be originating from the combined effects of the inhomogeneous distribution of point defects, F-pz, and indium compositions. | - |
dc.format.extent | 12 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | MDPI | - |
dc.title | Enhanced Radiative Recombination Rate by Local Potential Fluctuation in InGaN/AlGaN Near-Ultraviolet Light-Emitting Diodes | - |
dc.type | Article | - |
dc.publisher.location | 스위스 | - |
dc.identifier.doi | 10.3390/app9050871 | - |
dc.identifier.scopusid | 2-s2.0-85063727585 | - |
dc.identifier.wosid | 000462504400058 | - |
dc.identifier.bibliographicCitation | Applied Sciences-basel, v.9, no.5, pp 1 - 12 | - |
dc.citation.title | Applied Sciences-basel | - |
dc.citation.volume | 9 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 12 | - |
dc.type.docType | Article | - |
dc.description.isOpenAccess | Y | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Engineering, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | PHOTOLUMINESCENCE | - |
dc.subject.keywordPlus | LOCALIZATION | - |
dc.subject.keywordPlus | GAN | - |
dc.subject.keywordAuthor | light-emitting diodes | - |
dc.subject.keywordAuthor | indium composition | - |
dc.subject.keywordAuthor | defects | - |
dc.subject.keywordAuthor | piezoelectric field | - |
dc.subject.keywordAuthor | potential fluctuation | - |
dc.identifier.url | https://www.mdpi.com/2076-3417/9/5/871 | - |
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