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Barrier metal properties of remote-plasma MoCVD TaN and amorphous Ta-Si-N layersfor stacked ferroelectic capacitor cellKITE&IEEE
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 오재응 | - |
| dc.date.accessioned | 2021-06-23T09:09:45Z | - |
| dc.date.available | 2021-06-23T09:09:45Z | - |
| dc.date.created | 2020-12-17 | - |
| dc.date.issued | 1997-08-01 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/35881 | - |
| dc.title | Barrier metal properties of remote-plasma MoCVD TaN and amorphous Ta-Si-N layersfor stacked ferroelectic capacitor cellKITE&IEEE | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | 오재응 | - |
| dc.identifier.bibliographicCitation | International Conference onVLSI and CAD | - |
| dc.relation.isPartOf | International Conference onVLSI and CAD | - |
| dc.citation.title | International Conference onVLSI and CAD | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 1 | - |
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