Barrier metal properties of remote-plasma MoCVD TaN and amorphous Ta-Si-N layersfor stacked ferroelectic capacitor cellKITE&amp;IEEE

오재응

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Barrier metal properties of remote-plasma MoCVD TaN and amorphous Ta-Si-N layersfor stacked ferroelectic capacitor cellKITE&IEEE

Authors: 오재응

Issue Date: 1-Aug-1997

Citation: International Conference onVLSI and CAD

URI: https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/35881

Conference Name: International Conference onVLSI and CAD

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Appears in Collections: COLLEGE OF ENGINEERING SCIENCES > SCHOOL OF ELECTRICAL ENGINEERING > 2. Conference Papers

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