In-situ XPS study on ALD (Atomic Layer Deposition) of high-k dielectrics: La 2O 3 using La-formidinate and ozone
DC Field | Value | Language |
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dc.contributor.author | Kim, Jiyoung | - |
dc.contributor.author | Kim, Hyun chul | - |
dc.contributor.author | Wallace, Robert.M. | - |
dc.contributor.author | Park, Tae joo | - |
dc.date.accessioned | 2021-06-23T09:44:51Z | - |
dc.date.available | 2021-06-23T09:44:51Z | - |
dc.date.created | 2021-01-22 | - |
dc.date.issued | 2012 | - |
dc.identifier.issn | 1938-5862 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/36233 | - |
dc.description.abstract | The detailed growth behavior of lanthanum oxide (La 2O 3) on a silicon substrate during atomic layer deposition (ALD) is investigated by in-situ, x-ray photoelectron spectroscopy (XPS) following individual ALD pulses of tris(N,N′-diisopropyl-formamidinato) lanthanum [La( iPrfAMD) 3] and highly concentrated ozone (∼390 g/m 3). At the initial growth stage, ozone oxidized the La-ligand as well as the silicon substrate. During oxidation of silicon substrate, a noticeable amount of silicon atoms diffused into growing La 2O 3 film, resulting in Si-rich and La-rich La-silicates showing composition gradient of La/Si at the deposition temperature of 250°C. The amount of La-silicate after third ALD cycle reached more than 50% of that generated by 30 cycles. As the thickness of the film increased with sequential ALD cycles, the substrate oxidation as well as the out-diffusion of Si atoms becomes a negligible quantity, and the pure La 2O 3 film starts growing leaving La-silicate layers at the interface. ©The Electrochemical Society. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | Electrochemical Society, Inc. | - |
dc.title | In-situ XPS study on ALD (Atomic Layer Deposition) of high-k dielectrics: La 2O 3 using La-formidinate and ozone | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Tae joo | - |
dc.identifier.doi | 10.1149/1.3700876 | - |
dc.identifier.scopusid | 2-s2.0-84869075681 | - |
dc.identifier.bibliographicCitation | ECS Transactions, v.45, no.3, pp.95 - 101 | - |
dc.relation.isPartOf | ECS Transactions | - |
dc.citation.title | ECS Transactions | - |
dc.citation.volume | 45 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 95 | - |
dc.citation.endPage | 101 | - |
dc.type.rims | ART | - |
dc.type.docType | Conference Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | Composition gradient | - |
dc.subject.keywordPlus | Deposition temperatures | - |
dc.subject.keywordPlus | Growth behavior | - |
dc.subject.keywordPlus | Growth stages | - |
dc.subject.keywordPlus | High-k dielectric | - |
dc.subject.keywordPlus | Out-diffusion | - |
dc.subject.keywordPlus | Si atoms | - |
dc.subject.keywordPlus | Silicon atoms | - |
dc.subject.keywordPlus | Silicon substrates | - |
dc.subject.keywordPlus | Substrate oxidation | - |
dc.subject.keywordPlus | Thickness of the film | - |
dc.subject.keywordPlus | Interfaces (materials) | - |
dc.subject.keywordPlus | Lanthanum alloys | - |
dc.subject.keywordPlus | Lanthanum oxides | - |
dc.subject.keywordPlus | Manufacture | - |
dc.subject.keywordPlus | Nanosystems | - |
dc.subject.keywordPlus | Oxidation | - |
dc.subject.keywordPlus | Ozone | - |
dc.subject.keywordPlus | Ozone layer | - |
dc.subject.keywordPlus | Photoelectrons | - |
dc.subject.keywordPlus | Silicates | - |
dc.subject.keywordPlus | Silicon | - |
dc.subject.keywordPlus | X ray photoelectron spectroscopy | - |
dc.subject.keywordPlus | Atomic layer deposition | - |
dc.identifier.url | https://iopscience.iop.org/article/10.1149/1.3700876 | - |
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