ALD of LaHfOx nano-laminates for high-kappa gate dielectric applications
DC Field | Value | Language |
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dc.contributor.author | Lee, Beomhee | - |
dc.contributor.author | Hande, Abhiman | - |
dc.contributor.author | Park, Tae-joo | - |
dc.contributor.author | Chung, Keum-jee | - |
dc.contributor.author | Ahn, Jinho | - |
dc.contributor.author | Rousseau, Mike | - |
dc.contributor.author | Hong, Daewon | - |
dc.contributor.author | Li, Huazhi | - |
dc.contributor.author | Liu, Xinye | - |
dc.contributor.author | Shenai, Deo Vinayak | - |
dc.contributor.author | Kim, Jiyoung | - |
dc.date.accessioned | 2021-06-23T10:04:39Z | - |
dc.date.available | 2021-06-23T10:04:39Z | - |
dc.date.created | 2021-01-21 | - |
dc.date.issued | 2011-12 | - |
dc.identifier.issn | 0167-9317 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/36379 | - |
dc.description.abstract | Electrical properties and thermal stability of LaHfOx nano-laminate films deposited on Si substrates ty atomic layer deposition (ALD) have been investigated for future high-kappa gate dielectric applications. A novel La precursor, tris(N,N'-diisopropylformamidinato) lanthanum [La((i)PrfAMD)(3)], was employed in conjunction with conventional tetrakis-(ethylmethyl)amido Hf (TEMA HO and water (H2O). The capacitance-voltage curves of the metal oxide semiconductor capacitors (MOSCAPs) showed negigible hyste:esis and frequency dispersion, indicating minimal deterioration of the interface and bulk properties. A systematic shift in the flat-band voltage (V-fb) was observed with respect to the change in structure of nano-laminate stacks as well as La2O3 to HfO2 content in the films. The EOTs obtained were in the rang of similar to 1.23-1.5 nm with leakage current densities of 1.3 x 10(-8) A/cm(2) to 1.3 x 10(-8) A/cm(2) at V-fb - 1 V. In addition, the films with a higher content of La2O3 remained amorphous up to 950 degrees C indicating very gocd thermal stability, whereas the HfO2 rich films crystallized at lower temperatures. (C) 2011 Elsevier B.V. All rights reserved. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | Elsevier BV | - |
dc.title | ALD of LaHfOx nano-laminates for high-kappa gate dielectric applications | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Tae-joo | - |
dc.identifier.doi | 10.1016/j.mee.2011.05.033 | - |
dc.identifier.scopusid | 2-s2.0-81855222088 | - |
dc.identifier.wosid | 000299062200002 | - |
dc.identifier.bibliographicCitation | Microelectronic Engineering, v.88, no.12, pp.3385 - 3388 | - |
dc.relation.isPartOf | Microelectronic Engineering | - |
dc.citation.title | Microelectronic Engineering | - |
dc.citation.volume | 88 | - |
dc.citation.number | 12 | - |
dc.citation.startPage | 3385 | - |
dc.citation.endPage | 3388 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Optics | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Optics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | ATOMIC LAYER DEPOSITION | - |
dc.subject.keywordPlus | ELECTRICAL-PROPERTIES | - |
dc.subject.keywordPlus | LANTHANUM OXIDE | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | PRECURSOR | - |
dc.subject.keywordAuthor | High-kappa dielectrics | - |
dc.subject.keywordAuthor | ALD | - |
dc.subject.keywordAuthor | LaHfOx nano-laminate films | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0167931711005685?via%3Dihub | - |
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