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Oxide Double-Layer Nanocrossbar for Ultrahigh-Density Bipolar Resistive Memory
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Chang, Seo Hyoung | - |
| dc.contributor.author | Lee, Shin Buhm | - |
| dc.contributor.author | Jeon, Dae Young | - |
| dc.contributor.author | Park, So Jung | - |
| dc.contributor.author | Kim, Gyu Tae | - |
| dc.contributor.author | Yang, Sang Mo | - |
| dc.contributor.author | Chae, Seung Chul | - |
| dc.contributor.author | Yoo, Hyang Keun | - |
| dc.contributor.author | Kang, Bo Soo | - |
| dc.contributor.author | Lee, Myoung-Jae | - |
| dc.contributor.author | Noh, Tae Won | - |
| dc.date.accessioned | 2021-06-23T10:37:40Z | - |
| dc.date.available | 2021-06-23T10:37:40Z | - |
| dc.date.issued | 2011-09 | - |
| dc.identifier.issn | 0935-9648 | - |
| dc.identifier.issn | 1521-4095 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/37189 | - |
| dc.description.abstract | A TiO2/VO2 oxide double-layer nanocrossbar to overcome the sneak path problem in bipolar resistive memory is proposed. TiO2 and VO2 thin films function as a bipolar resistive memory and a bidirectional switch, respectively. The new structure suggests that ultrahigh densities can be achieved with a 2D nanocrossbar array layout. By stacking into a 3D structure, the density can be even higher. | - |
| dc.format.extent | 5 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim | - |
| dc.title | Oxide Double-Layer Nanocrossbar for Ultrahigh-Density Bipolar Resistive Memory | - |
| dc.type | Article | - |
| dc.publisher.location | 독일 | - |
| dc.identifier.doi | 10.1002/adma.201102395 | - |
| dc.identifier.scopusid | 2-s2.0-80052519585 | - |
| dc.identifier.wosid | 000295228000007 | - |
| dc.identifier.bibliographicCitation | Advanced Materials, v.23, no.35, pp 4063 - 4067 | - |
| dc.citation.title | Advanced Materials | - |
| dc.citation.volume | 23 | - |
| dc.citation.number | 35 | - |
| dc.citation.startPage | 4063 | - |
| dc.citation.endPage | 4067 | - |
| dc.type.docType | Article | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | sci | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Chemistry | - |
| dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
| dc.relation.journalResearchArea | Materials Science | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
| dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
| dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
| dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
| dc.subject.keywordPlus | NONVOLATILE | - |
| dc.subject.keywordPlus | SWITCHES | - |
| dc.subject.keywordPlus | DIODE | - |
| dc.subject.keywordAuthor | crossbar architecture | - |
| dc.subject.keywordAuthor | nanodevices | - |
| dc.subject.keywordAuthor | resistance switching | - |
| dc.subject.keywordAuthor | sneak path problem | - |
| dc.subject.keywordAuthor | titanium dioxide | - |
| dc.identifier.url | https://onlinelibrary.wiley.com/doi/10.1002/adma.201102395 | - |
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Related Researcher
- Kang, Bo Soo
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY (DEPARTMENT OF APPLIED PHYSICS)