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Noise characteristics of sub-micron gateAaAs MESFETs and pseudomorpgicHEMTs and the influence of the gateleakage current on thein performance
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 오재응 | - |
| dc.date.accessioned | 2021-06-23T10:45:45Z | - |
| dc.date.available | 2021-06-23T10:45:45Z | - |
| dc.date.created | 2020-12-17 | - |
| dc.date.issued | 1995-02-01 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/37592 | - |
| dc.publisher | 한국 과학 기술원 | - |
| dc.title | Noise characteristics of sub-micron gateAaAs MESFETs and pseudomorpgicHEMTs and the influence of the gateleakage current on thein performance | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | 오재응 | - |
| dc.identifier.bibliographicCitation | 제 2회 반도체 학술대회 논문집 | - |
| dc.relation.isPartOf | 제 2회 반도체 학술대회 논문집 | - |
| dc.citation.title | 제 2회 반도체 학술대회 논문집 | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 2 | - |
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