Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Conversion from unipolar to bipolar resistance switching by inserting Ta2O5 layer in Pt/TaOx/Pt cells
Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Yoo, H. K. | - |
| dc.contributor.author | Lee, S. B. | - |
| dc.contributor.author | Lee, J. S. | - |
| dc.contributor.author | Chang, S. H. | - |
| dc.contributor.author | Yoon, M. J. | - |
| dc.contributor.author | Kim, Y. S. | - |
| dc.contributor.author | Kang, B. S. | - |
| dc.contributor.author | Lee, M. -J. | - |
| dc.contributor.author | Kim, C. J. | - |
| dc.contributor.author | Kahng, B. | - |
| dc.contributor.author | Noh, T. W. | - |
| dc.date.accessioned | 2021-06-23T11:01:49Z | - |
| dc.date.available | 2021-06-23T11:01:49Z | - |
| dc.date.issued | 2011-05 | - |
| dc.identifier.issn | 0003-6951 | - |
| dc.identifier.issn | 1077-3118 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/38056 | - |
| dc.description.abstract | We observed unipolar resistance switching in Pt/TaOx/Pt cells. We could make the cell have the bipolar resistance switching by inserting a stoichiometric Ta2O5 layer between Pt and TaOx layers. Bipolar resistance switching in Pt/Ta2O5/TaOx/Pt cells occurred reliably without applying an external compliance current. With increase in the Ta2O5 layer thickness, the current value at the low-resistance state became decreased but the forming voltage became increased. We could explain these intriguing phenomena using the interface-modified random circuit breaker network model. (C) 2011 American Institute of Physics. [doi:10.1063/1.3587809] | - |
| dc.format.extent | 4 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | AMER INST PHYSICS | - |
| dc.title | Conversion from unipolar to bipolar resistance switching by inserting Ta2O5 layer in Pt/TaOx/Pt cells | - |
| dc.type | Article | - |
| dc.publisher.location | 미국 | - |
| dc.identifier.doi | 10.1063/1.3587809 | - |
| dc.identifier.scopusid | 2-s2.0-79957510490 | - |
| dc.identifier.wosid | 000290392300071 | - |
| dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.98, no.18, pp 1 - 4 | - |
| dc.citation.title | APPLIED PHYSICS LETTERS | - |
| dc.citation.volume | 98 | - |
| dc.citation.number | 18 | - |
| dc.citation.startPage | 1 | - |
| dc.citation.endPage | 4 | - |
| dc.type.docType | Article | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | sci | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.subject.keywordPlus | Platinum | - |
| dc.subject.keywordPlus | Tantalum oxides | - |
| dc.subject.keywordPlus | Circuit breaker | - |
| dc.subject.keywordPlus | Compliance current | - |
| dc.subject.keywordPlus | Layer thickness | - |
| dc.subject.keywordPlus | Low-resistance state | - |
| dc.subject.keywordPlus | Network models | - |
| dc.subject.keywordPlus | Resistance switching | - |
| dc.identifier.url | https://aip.scitation.org/doi/10.1063/1.3587809 | - |
- Files in This Item
- Go to Link
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
Related Researcher
- Kang, Bo Soo
- ERICA 첨단융합대학 (ERICA 지능정보양자공학전공)