Hydrogen passivation effect on the yellow-green emission band and bound exciton in n-ZnO
- Authors
- Kim, Moon-Deock; Oh, Jae-Eung; Kim, Song-Gang; Yang, Woo Chul
- Issue Date
- May-2011
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Keywords
- Semiconductors; Crystal growth; Impurities in semiconductors; Optical properties
- Citation
- SOLID STATE COMMUNICATIONS, v.151, no.10, pp 768 - 770
- Pages
- 3
- Indexed
- SCI
SCIE
SCOPUS
- Journal Title
- SOLID STATE COMMUNICATIONS
- Volume
- 151
- Number
- 10
- Start Page
- 768
- End Page
- 770
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/38111
- DOI
- 10.1016/j.ssc.2011.03.009
- ISSN
- 0038-1098
1879-2766
- Abstract
- Photoluminescence (PL) measurements performed on as-grown, hydrogenated, and annealed n-type ZnO bulk samples investigated the origins of their yellow (2.10 eV) and green (2.43 eV) emission bands. After hydrogenation, the defect-related peak at 2.10 eV was no longer present in the room temperature PL spectrum, the peak intensity at 2.43 eV was unchanged, and the intensity of the emission peak at 3.27 eV increased significantly. These results indicate that yellow band emission is due to oxygen vacancies, as the emission peak at 2.10 eV disappears when hydrogen atoms passivate these vacancies. The emission peak at 2.43 eV originates from complexes between oxygen vacancies and other crystal defects. We discuss the shallow donor impurities arising due to these hydrogen atoms in the ZnO bulk sample. (C) 2011 Elsevier Ltd. All rights reserved.
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