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Hydrogen passivation effect on the yellow-green emission band and bound exciton in n-ZnO

Authors
Kim, Moon-DeockOh, Jae-EungKim, Song-GangYang, Woo Chul
Issue Date
May-2011
Publisher
PERGAMON-ELSEVIER SCIENCE LTD
Keywords
Semiconductors; Crystal growth; Impurities in semiconductors; Optical properties
Citation
SOLID STATE COMMUNICATIONS, v.151, no.10, pp 768 - 770
Pages
3
Indexed
SCI
SCIE
SCOPUS
Journal Title
SOLID STATE COMMUNICATIONS
Volume
151
Number
10
Start Page
768
End Page
770
URI
https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/38111
DOI
10.1016/j.ssc.2011.03.009
ISSN
0038-1098
1879-2766
Abstract
Photoluminescence (PL) measurements performed on as-grown, hydrogenated, and annealed n-type ZnO bulk samples investigated the origins of their yellow (2.10 eV) and green (2.43 eV) emission bands. After hydrogenation, the defect-related peak at 2.10 eV was no longer present in the room temperature PL spectrum, the peak intensity at 2.43 eV was unchanged, and the intensity of the emission peak at 3.27 eV increased significantly. These results indicate that yellow band emission is due to oxygen vacancies, as the emission peak at 2.10 eV disappears when hydrogen atoms passivate these vacancies. The emission peak at 2.43 eV originates from complexes between oxygen vacancies and other crystal defects. We discuss the shallow donor impurities arising due to these hydrogen atoms in the ZnO bulk sample. (C) 2011 Elsevier Ltd. All rights reserved.
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