Interface-modified random circuit breaker network model applicable to both bipolar and unipolar resistance switching
DC Field | Value | Language |
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dc.contributor.author | Lee, S. B. | - |
dc.contributor.author | Lee, J. S. | - |
dc.contributor.author | Chang, S. H. | - |
dc.contributor.author | Yoo, H. K. | - |
dc.contributor.author | Kang, B. S. | - |
dc.contributor.author | Kahng, B. | - |
dc.contributor.author | Lee, M. -J. | - |
dc.contributor.author | Kim, C. J. | - |
dc.contributor.author | Noh, T. W. | - |
dc.date.accessioned | 2021-06-23T11:06:26Z | - |
dc.date.available | 2021-06-23T11:06:26Z | - |
dc.date.issued | 2011-01 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.issn | 1077-3118 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/38299 | - |
dc.description.abstract | We observed reversible-type changes between bipolar (BRS) and unipolar resistance switching (URS) in one Pt/SrTiOx/Pt capacitor. To explain both BRS and URS in a unified scheme, we introduce the "interface-modified random circuit breaker network model," in which the bulk medium is represented by a percolating network of circuit breakers. To consider interface effects in BRS, we introduce circuit breakers to investigate resistance states near the interface. This percolation model explains the reversible-type changes in terms of connectivity changes in the circuit breakers and provides insights into many experimental observations of BRS which are under debate by earlier theoretical models. (c) 2011 American Institute of Physics. [doi:10.1063/1.3543776] | - |
dc.format.extent | 4 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Interface-modified random circuit breaker network model applicable to both bipolar and unipolar resistance switching | - |
dc.type | Article | - |
dc.publisher.location | 미국 | - |
dc.identifier.doi | 10.1063/1.3543776 | - |
dc.identifier.scopusid | 2-s2.0-79251557831 | - |
dc.identifier.wosid | 000286471100045 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.98, no.3, pp 1 - 4 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 98 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 4 | - |
dc.type.docType | Article | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | sci | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | MEMORY | - |
dc.subject.keywordAuthor | MEMORY | - |
dc.identifier.url | https://aip.scitation.org/doi/10.1063/1.3543776 | - |
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