Highly efficient InGaN/GaN blue LED grown on Si (111) substrate
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Jun-Youn | - |
dc.contributor.author | Tak, Yongjo | - |
dc.contributor.author | Lee, Jae Won | - |
dc.contributor.author | Hong, Hyun-Gi | - |
dc.contributor.author | Chae, Suhee | - |
dc.contributor.author | Choi, Hyoji | - |
dc.contributor.author | Min, Bokki | - |
dc.contributor.author | Park, Youngsoo | - |
dc.contributor.author | Kim, Minho | - |
dc.contributor.author | Lee, Seongsuk | - |
dc.contributor.author | Cha, Namgoo | - |
dc.contributor.author | Shin, Yoonhee | - |
dc.contributor.author | Kim, Jong-Ryeol | - |
dc.contributor.author | Shim, Jong-In | - |
dc.date.accessioned | 2021-06-23T12:05:06Z | - |
dc.date.available | 2021-06-23T12:05:06Z | - |
dc.date.created | 2021-01-22 | - |
dc.date.issued | 2011-05 | - |
dc.identifier.issn | 2162-2701 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/39148 | - |
dc.description.abstract | For the first time, based on the high crystalline quality of n-GaN on Si template, highly efficient InGaN/GaN LEDs grown on 4-inch silicon substrates comparable to those on sapphire substrates have been successfully demonstrated. At driving current of 350 mA, the overall output power of 1×1 mm2 LED chips exceeded 420 mW and forward voltage was 3.2 V under un-encapsulated condition, which is the best value among the reported values of blue LED grown on Si substrates. The internal quantum efficiency of 76% at injection current of 350 mA was measured. ©2011 Optical Society of America. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IEEE | - |
dc.title | Highly efficient InGaN/GaN blue LED grown on Si (111) substrate | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Shim, Jong-In | - |
dc.identifier.scopusid | 2-s2.0-84893579576 | - |
dc.identifier.wosid | 000295612402156 | - |
dc.identifier.bibliographicCitation | Optics InfoBase Conference Papers, pp.1 - 2 | - |
dc.relation.isPartOf | Optics InfoBase Conference Papers | - |
dc.citation.title | Optics InfoBase Conference Papers | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 2 | - |
dc.type.rims | ART | - |
dc.type.docType | Conference Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Optics | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Optics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | Driving current | - |
dc.subject.keywordPlus | Forward voltage | - |
dc.subject.keywordPlus | High-crystalline quality | - |
dc.subject.keywordPlus | Injection currents | - |
dc.subject.keywordPlus | Internal quantum efficiency | - |
dc.subject.keywordPlus | Sapphire substrates | - |
dc.subject.keywordPlus | Si(111) substrate | - |
dc.subject.keywordPlus | Silicon substrates | - |
dc.subject.keywordPlus | Sapphire | - |
dc.subject.keywordPlus | Substrates | - |
dc.subject.keywordPlus | Silicon | - |
dc.identifier.url | https://ieeexplore.ieee.org/document/5950731?arnumber=5950731&SID=EBSCO:edseee | - |
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