Reduction of Residual C and N-Related Impurities by Al2O3 Insertion in Atomic-Layer-Deposited La2O3 Thin Films
DC Field | Value | Language |
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dc.contributor.author | Park, Tae Joo | - |
dc.contributor.author | Sivasubramani, Prasanna | - |
dc.contributor.author | Coss, Brian E. | - |
dc.contributor.author | Lee, Bongki | - |
dc.contributor.author | Wallace, Robert M. | - |
dc.contributor.author | Kim, Jiyoung | - |
dc.contributor.author | Rousseau, Mike | - |
dc.contributor.author | Liu, Xinye | - |
dc.contributor.author | Li, Huazhi | - |
dc.contributor.author | Lehn, Jean-Sebastien | - |
dc.contributor.author | Hong, Daewon | - |
dc.contributor.author | Shenai, Deo | - |
dc.date.accessioned | 2021-06-23T12:06:10Z | - |
dc.date.available | 2021-06-23T12:06:10Z | - |
dc.date.created | 2021-01-21 | - |
dc.date.issued | 2011-03 | - |
dc.identifier.issn | 1099-0062 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/39190 | - |
dc.description.abstract | The effects of Trimethyl aluminum (TMA) in atomic-layer-deposition (ALD) of La2O3 film using Tris(N, N'-diisopropylformamidinato) lanthanum and H2O were examined. The behaviors of Si diffusion and the residual C and N-related impurities were observed by in situ x-ray photoelectron spectroscopy. The La-silicate formation by Si out-diffusion from the substrate was suppressed by TMA/H2O pulse (Al2O3), but hardly suppressed the interfacial SiO2 layer growth during ALD. It was confirmed that TMA/H2O pulse (Al2O3) insertion eliminated the residual C-and N-related impurities with low binding energy in the La2O3 film which originated from the incomplete reactions of precursor during ALD. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3545965] All rights reserved. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | Electrochemical Society, Inc. | - |
dc.title | Reduction of Residual C and N-Related Impurities by Al2O3 Insertion in Atomic-Layer-Deposited La2O3 Thin Films | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Tae Joo | - |
dc.identifier.doi | 10.1149/1.3545965 | - |
dc.identifier.scopusid | 2-s2.0-79952494917 | - |
dc.identifier.wosid | 000288128800017 | - |
dc.identifier.bibliographicCitation | Electrochemical and Solid-State Letters, v.14, no.5, pp.G23 - G26 | - |
dc.relation.isPartOf | Electrochemical and Solid-State Letters | - |
dc.citation.title | Electrochemical and Solid-State Letters | - |
dc.citation.volume | 14 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | G23 | - |
dc.citation.endPage | G26 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Electrochemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Electrochemistry | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | HFO2 FILMS | - |
dc.subject.keywordPlus | IN-SITU | - |
dc.subject.keywordPlus | PRECURSOR | - |
dc.subject.keywordPlus | STABILITY | - |
dc.subject.keywordPlus | XPS | - |
dc.subject.keywordAuthor | PRECURSOR | - |
dc.subject.keywordAuthor | STABILITY | - |
dc.subject.keywordAuthor | HFO2 FILMS | - |
dc.subject.keywordAuthor | XPS | - |
dc.subject.keywordAuthor | IN-SITU | - |
dc.subject.keywordAuthor | LANTHANUM OXIDE | - |
dc.identifier.url | https://iopscience.iop.org/article/10.1149/1.3545965 | - |
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