Effects of post plasma treatment on material properties and device characteristics in indium zinc oxide thin film transistors
DC Field | Value | Language |
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dc.contributor.author | Kim, Won | - |
dc.contributor.author | Bang, Jung-Hwan | - |
dc.contributor.author | Uhm, Hyun-Seok | - |
dc.contributor.author | Lee, Sang-Hyuk | - |
dc.contributor.author | Park, Jin-Seok | - |
dc.date.accessioned | 2021-06-23T12:07:46Z | - |
dc.date.available | 2021-06-23T12:07:46Z | - |
dc.date.created | 2021-01-21 | - |
dc.date.issued | 2010-12 | - |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/39256 | - |
dc.description.abstract | Presented in this study are the results of an experiment that was performed regarding the effects of plasma post-treatment on the material properties of amorphous indium zinc oxide (a-IZO) films, and on the device characteristics of the thin film transistor when an a-IZO film is used as the channel layer. Prior to the source/drain deposition, post-treatment was performed on the area that was not covered by photoresist (PR), using Ar and H-2 plasma. The electrical resistivity of a-IZO films was dramatically reduced when they were plasma-treated. The creation of an oxygen vacancy and the formation of hydroxyls in the a-IZO film due to plasma treatment were identified via X-ray photoelectron spectroscopy (XPS) analysis. The change in the field effect mobility (mu(FE)) due to the plasma post-treatment was inversely proportional to the change in the contact resistance (R-C) of the plasma-treated a-IZO layer. The prolonged (>1 min) treatment using H-2 plasma caused deep electron traps and surface damages, resulting in the increased R-C (or decreased mu(FE)) of the a-IZO TFT. In addition, for the a-IZO TFT that underwent H-2 plasma treatment, the V-T monotonically decreased whereas the V-T of the a-IZO TFT that was Ar-plasma-treated remained almost the same as that of the untreated a-IZO TFT. (C) 2010 Elsevier B.V. All rights reserved. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.title | Effects of post plasma treatment on material properties and device characteristics in indium zinc oxide thin film transistors | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Jin-Seok | - |
dc.identifier.doi | 10.1016/j.tsf.2010.08.082 | - |
dc.identifier.scopusid | 2-s2.0-78649725217 | - |
dc.identifier.wosid | 000286305100018 | - |
dc.identifier.bibliographicCitation | THIN SOLID FILMS, v.519, no.5, pp.1573 - 1577 | - |
dc.relation.isPartOf | THIN SOLID FILMS | - |
dc.citation.title | THIN SOLID FILMS | - |
dc.citation.volume | 519 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | 1573 | - |
dc.citation.endPage | 1577 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | ELECTRICAL-PROPERTIES | - |
dc.subject.keywordPlus | CONTACT RESISTANCE | - |
dc.subject.keywordPlus | OPTICAL-PROPERTIES | - |
dc.subject.keywordPlus | HYDROGEN PLASMA | - |
dc.subject.keywordPlus | TRANSPARENT | - |
dc.subject.keywordPlus | ZNO | - |
dc.subject.keywordPlus | THICKNESS | - |
dc.subject.keywordPlus | ELECTRODES | - |
dc.subject.keywordPlus | TFTS | - |
dc.subject.keywordAuthor | Indium zinc oxide (IZO) | - |
dc.subject.keywordAuthor | Thin film transistor (TFT) | - |
dc.subject.keywordAuthor | Plasma treatment | - |
dc.subject.keywordAuthor | Contact resistance | - |
dc.subject.keywordAuthor | X-ray photoelectron spectroscopy (XPS) | - |
dc.subject.keywordAuthor | Surface damage | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0040609010011971?via%3Dihub | - |
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