Effects of O-3 and H2O oxidants on C and N-related impurities in atomic-layer-deposited La2O3 films observed by in situ x-ray photoelectron spectroscopy
DC Field | Value | Language |
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dc.contributor.author | Park, Tae Joo | - |
dc.contributor.author | Sivasubramani, Prasanna | - |
dc.contributor.author | Coss, Brian E. | - |
dc.contributor.author | Kim, Hyun-Chul | - |
dc.contributor.author | Lee, Bongki | - |
dc.contributor.author | Wallace, Robert M. | - |
dc.contributor.author | Kim, Jiyoung | - |
dc.contributor.author | Rousseau, Mike | - |
dc.contributor.author | Liu, Xinye | - |
dc.contributor.author | Li, Huazhi | - |
dc.contributor.author | Lehn, Jean-Sebastien | - |
dc.contributor.author | Hong, Daewon | - |
dc.contributor.author | Shenai, Deo | - |
dc.date.accessioned | 2021-06-23T12:42:05Z | - |
dc.date.available | 2021-06-23T12:42:05Z | - |
dc.date.created | 2021-01-21 | - |
dc.date.issued | 2010-08 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/39581 | - |
dc.description.abstract | The effect of H2O and O-3 oxidants on the behavior of residual C and N-related impurities as well as Si out-diffusion and interfacial layer formation in atomic-layer-deposited La2O3 films grown at 250 degrees C were examined using in situ x-ray photoelectron spectroscopy. The silicate formation was suppressed in a La2O3 film grown using O-3 compared to that deposited using H2O, but interfacial layer growth was enhanced. The accumulation of C and N-related residues with low binding energy, which originated from incomplete reactions, was suppressed in La2O3 films grown using O-3. However, the use of O-3 resulted in La-carbonate phase in film. (C) 2010 American Institute of Physics. [doi :10.1063/1.3481377] | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | American Institute of Physics | - |
dc.title | Effects of O-3 and H2O oxidants on C and N-related impurities in atomic-layer-deposited La2O3 films observed by in situ x-ray photoelectron spectroscopy | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Tae Joo | - |
dc.identifier.doi | 10.1063/1.3481377 | - |
dc.identifier.scopusid | 2-s2.0-77956381226 | - |
dc.identifier.wosid | 000282187200050 | - |
dc.identifier.bibliographicCitation | Applied Physics Letters, v.97, no.9, pp.1 - 4 | - |
dc.relation.isPartOf | Applied Physics Letters | - |
dc.citation.title | Applied Physics Letters | - |
dc.citation.volume | 97 | - |
dc.citation.number | 9 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 4 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | ELECTRICAL-PROPERTIES | - |
dc.subject.keywordPlus | PRECURSOR | - |
dc.subject.keywordPlus | AL2O3 | - |
dc.subject.keywordPlus | XPS | - |
dc.subject.keywordPlus | LA | - |
dc.subject.keywordAuthor | Interfacial layer | - |
dc.subject.keywordAuthor | Atomic layer deposited | - |
dc.subject.keywordAuthor | Photons | - |
dc.subject.keywordAuthor | Silicates | - |
dc.subject.keywordAuthor | In-situ | - |
dc.subject.keywordAuthor | Oxidants | - |
dc.subject.keywordAuthor | Impurities in | - |
dc.subject.keywordAuthor | Out-diffusion | - |
dc.subject.keywordAuthor | Binding energy | - |
dc.subject.keywordAuthor | X ray photoelectron spectroscopy | - |
dc.subject.keywordAuthor | Photoelectricity | - |
dc.subject.keywordAuthor | Silicate formation | - |
dc.identifier.url | https://aip.scitation.org/doi/10.1063/1.3481377 | - |
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