Resistive switching transition induced by a voltage pulse in a Pt/NiO/Pt structure
DC Field | Value | Language |
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dc.contributor.author | Hwang, Inrok | - |
dc.contributor.author | Lee, Myung-Jae | - |
dc.contributor.author | Buh, Gyoung-Ho | - |
dc.contributor.author | Bae, Jieun | - |
dc.contributor.author | Choi, Jinsik | - |
dc.contributor.author | Kim, Jin-Soo | - |
dc.contributor.author | Hong, Sahwan | - |
dc.contributor.author | Kim, Yeon Soo | - |
dc.contributor.author | Byun, Ik-Su | - |
dc.contributor.author | Lee, Seung-Woong | - |
dc.contributor.author | Ahn, Seung-Eon | - |
dc.contributor.author | Kang, Bo Soo | - |
dc.contributor.author | Kang, Sung-Oong | - |
dc.contributor.author | Park, Bae Ho | - |
dc.date.accessioned | 2021-06-23T13:01:53Z | - |
dc.date.available | 2021-06-23T13:01:53Z | - |
dc.date.created | 2021-01-21 | - |
dc.date.issued | 2010-08 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/39593 | - |
dc.description.abstract | We have observed a switching transition between bistable memory switching and monostable threshold switching in Pt/NiO/Pt structure. Bistable memory switching could be changed to monostable threshold switching by applying a positive electrical pulse with height of 2 V and width between 10(-2) and 10(-4) s. The change is reversible by applying a negative electrical pulse with the same height and width. By considering polarity-and width-dependence of the switching transition and compositional difference on electrical properties in NiOx, we have proposed a model in which the migration of oxygen ions (O2-) is responsible for the switching transition in Pt/NiO/Pt structures. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3477953] | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Resistive switching transition induced by a voltage pulse in a Pt/NiO/Pt structure | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kang, Bo Soo | - |
dc.identifier.doi | 10.1063/1.3477953 | - |
dc.identifier.scopusid | 2-s2.0-77955744722 | - |
dc.identifier.wosid | 000281059500029 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.97, no.5, pp.1 - 4 | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 97 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 4 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | NONVOLATILE MEMORY | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordAuthor | FILMS | - |
dc.subject.keywordAuthor | NONVOLATILE MEMORY | - |
dc.identifier.url | https://aip.scitation.org/doi/10.1063/1.3477953 | - |
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