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Protection of Memories Suffering MCUs Through the Selection of the Optimal Interleaving Distance

Authors
Reviriego, PedroAntonio Maestro, JuanBaeg, SanghyeonWen, ShiJieWong, Richard
Issue Date
Aug-2010
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Keywords
Interleaving distance; memory; multiple cell upsets (MCUs); soft error
Citation
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, v.57, no.4, pp.2124 - 2128
Indexed
SCIE
SCOPUS
Journal Title
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
Volume
57
Number
4
Start Page
2124
End Page
2128
URI
https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/39606
DOI
10.1109/TNS.2010.2042818
ISSN
0018-9499
Abstract
Interleaving, together with single error correction codes (SEC), are common techniques to protect memories against multiple cell upsets (MCUs). This kind of errors is increasingly important as technology scales, becoming a prominent effect, and therefore greatly affecting the reliability of memories. Ideally, the interleaving distance (ID) should be chosen as the maximum expected MCU size. In this way, all errors in an MCU would occur in different logical words, thus being correctable by the SEC codes. However, the use of large interleaving distances usually results in an area increase and a more complex design of memories. In this paper, the selection of the optimal interleaving distance is explored, keeping the area overhead and complexity as low as possible, without compromising memory reliability.
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ERICA 공학대학 (SCHOOL OF ELECTRICAL ENGINEERING)
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