Strain relaxation effect on electronic properties of compressively strained InGaAs/InP vertically stacked multiple quantum wires
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, Seoung-Hwan | - |
dc.contributor.author | Shim, Jong-In | - |
dc.contributor.author | Yi, Sam Nyung | - |
dc.date.accessioned | 2021-06-23T13:02:55Z | - |
dc.date.available | 2021-06-23T13:02:55Z | - |
dc.date.created | 2021-01-21 | - |
dc.date.issued | 2010-07 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/39638 | - |
dc.description.abstract | Electronic properties of compressively strained InGaAs/InP vertically stacked multiple quantum wires were investigated using an six-band strain-dependent k.p Hamiltonian. The strain tensor epsilon(yy) (epsilon(xx)) is found to relax from its initial strain. The amount of relaxation is dependent on the number of wire layers in the vertical stack and increases with the number of wire layers. The interband transition energy also decreases with the number of wire layers. This is mainly attributed to the decrease in the conduction band energy because subband energies in the valence band are nearly independent of the strain. The matrix element is shown to slightly decrease with increasing number of the wire layer in the vertical stack. (C) 2010 American Institute of Physics. [doi:10.1063/1.3456073] | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | American Institute of Physics | - |
dc.title | Strain relaxation effect on electronic properties of compressively strained InGaAs/InP vertically stacked multiple quantum wires | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Shim, Jong-In | - |
dc.identifier.doi | 10.1063/1.3456073 | - |
dc.identifier.scopusid | 2-s2.0-77955827132 | - |
dc.identifier.wosid | 000280909900004 | - |
dc.identifier.bibliographicCitation | Journal of Applied Physics, v.108, no.2, pp.1 - 7 | - |
dc.relation.isPartOf | Journal of Applied Physics | - |
dc.citation.title | Journal of Applied Physics | - |
dc.citation.volume | 108 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 7 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | BAND-STRUCTURES | - |
dc.subject.keywordPlus | THRESHOLD | - |
dc.subject.keywordPlus | LASERS | - |
dc.subject.keywordPlus | GAIN | - |
dc.identifier.url | https://aip.scitation.org/doi/10.1063/1.3456073 | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
55 Hanyangdeahak-ro, Sangnok-gu, Ansan, Gyeonggi-do, 15588, Korea+82-31-400-4269 sweetbrain@hanyang.ac.kr
COPYRIGHT © 2021 HANYANG UNIVERSITY. ALL RIGHTS RESERVED.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.