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A study of virtual lithography process for polymer directed self-assembly

Authors
Kim, Sang-KonOh, Hye-KeunJung, Young-DaeAn, Ilsin
Issue Date
May-2010
Publisher
ELSEVIER SCIENCE BV
Keywords
Lithography; Lithography simulation; Self-assembly; Self-assembly process
Citation
MICROELECTRONIC ENGINEERING, v.87, no.5-8, pp.883 - 886
Indexed
SCIE
SCOPUS
Journal Title
MICROELECTRONIC ENGINEERING
Volume
87
Number
5-8
Start Page
883
End Page
886
URI
https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/39852
DOI
10.1016/j.mee.2009.12.029
ISSN
0167-9317
Abstract
For the feature size scaling down to tens of nanometers, the top-down approaches are getting more severe because the extremely ultra-violet (EUV) technique, the high-index fluid-based immersion ArF lithography, and the double patterning technology (DPT) under development may be cover one or two generations. An alternative technology to extend lithography patterning beyond current resolution limits is to combine the top-down lithography and bottom-up assembly. In this paper, an directed self-assembly lithography process of "bottom-up" block copolymer self-assembly, is modeled and simulated in molecular-scale. Impacts of block polymer components on pattern formation are analyzed and discussed. (C) 2009 Elsevier B.V. All rights reserved.
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COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY > DEPARTMENT OF PHOTONICS AND NANOELECTRONICS > 1. Journal Articles
COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY > DEPARTMENT OF APPLIED PHYSICS > 1. Journal Articles

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COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY (DEPARTMENT OF APPLIED PHYSICS)
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