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Fractal Dimension of Conducting Paths in Nickel Oxide (NiO) Thin Films During Resistance Switching
- Authors
- Yoo, In Kyeong; Kang, Bo Soo; Ahn, Seung Eon; Lee, Chang Bum; Lee, Myoung Jae; Park, Gyeong-Su; Li, Xiang-Shu
- Issue Date
- Mar-2010
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Nickel oxide; resistance switching; soft breakdown; switching power
- Citation
- IEEE TRANSACTIONS ON NANOTECHNOLOGY, v.9, no.2, pp.131 - 133
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE TRANSACTIONS ON NANOTECHNOLOGY
- Volume
- 9
- Number
- 2
- Start Page
- 131
- End Page
- 133
- ISSN
- 1536-125X
- Abstract
- A resistance-switching model in nickel oxide thin film is proposed based on Poisson distribution of electrical switching power. Conductive percolating network in soft breakdown surface may be the source of resistance switching. The main body of network may remain unchanged, but a portion of network is broken and healed repeatedly during switching. Dependence of reset current on electrode area is explained by fractal dimension.
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Related Researcher
- Kang, Bo Soo
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY (DEPARTMENT OF APPLIED PHYSICS)