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Microstructural properties and initial growth behavior of InN nanobats grown on a Si(111) substrate
- Authors
- Kim, Y. H.; Yun, W. S.; Ruh, H.; Kim, C. S.; Kim, J. W.; Shin, Y. H.; Kim, M. D.; Oh, J. E.
- Issue Date
- Feb-2010
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- Nanostructures; Interfaces; Molecular beam epitaxy; Nitrides
- Citation
- JOURNAL OF CRYSTAL GROWTH, v.312, no.5, pp 662 - 666
- Pages
- 5
- Indexed
- SCI
SCIE
SCOPUS
- Journal Title
- JOURNAL OF CRYSTAL GROWTH
- Volume
- 312
- Number
- 5
- Start Page
- 662
- End Page
- 666
- ISSN
- 0022-0248
1873-5002
- Abstract
- Bat-like InN nanostructures were successfully grown on GaN/AlN/Si(1 1 1) substrates using molecular beam epitaxy method. The initial growth behavior and structural properties of InN nanobats were studied from a nanostructural point of view. During the initial stage of the growth, a nucleation process and a shape-decision process took place in which 3-dimensional (3-D) GaN nanoislands and nanorods were formed on AlN initiation layer/Si substrate. This was followed by the independent growth of 3-D InN nanoislands and nanorods. Lateral expansion of the InN nanobats was observed, and the diameter of InN bats then reached a fixed value. (C) 2009 Elsevier B.V. All rights reserved.
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