산화인듐아연 박막 트랜지스터에서 질소 첨가가스가 활성층의 물성 및 소자의 특성에 미치는 영향

Abstract

I

Indium-zinc-oxide (IZO) films were deposited at room temperature via RF sputtering with varying the flow rate of additive nitrogen gas (N2). Thin film transistors (TFTs) with an inverted staggered configuration were fabricated by employing the various IZO films, such as N2-added and pure (i.e., w/o N2-added), as active channel layers. For all the deposited IZO films, effects of additive N2 gas on their deposition rates, electrical resistivities, optical transmittances and bandgaps, and chemical structures were extensively investigated. Transfer characteristics of the IZO-based TFTs were measured and characterized in terms of the flow rate of additive N2 gas. The experimental results indicated that the transistor action occurred when the N2-added (with N2 flow rate of 0.4-1.0 sccm) IZO films were used as the active layer, in contrast to the case of using the pure IZO film.