Synthesize of metal-semiconductor segmented nanowire by electrodeposition

Abstract

Metal-semiconductor segmented nanowire was synthesized to increase the thermopower factor with enhancing electrical conductivity by inserting metal. Various electrodeposition were performed to fabricate metal-semiconductor (Ag-BiTe) segmented nanowire structure. Metalmetal (Ag-Ni) segmented structure was fabricated by electrodeposition in dual bath and semimetal segmented nanowire structure was fabricated by galvanic-displacement electrodeposition with metal-metal segmented structure. The morphology and structural characteristics of these various segmented nanowire were investigated to understand the possibility of this segmented nanowire as a thermoelectric material. © 2010 Materials Research Society.