Memory reliability model for accumulated and clustered soft errors

Abstract

The soft error rate of memories is increased by high-energy particles as technology shrinks. Single-error correction codes (SEC), scrubbing techniques and interleaving schemes are the most common approaches for protecting memories from soft errors. It is essential to employ analytical models to guide the selection of interleaving distance; relying on rough estimates may lead to unreasonable design choices. The analytic model proposed in this paper includes row clustering effects of accumulated upsets and was able to estimate the failure probability with only a difference of 0.41% compared to the test data for a 45nm SRAM design. © 2010 IEEE.