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Triangular GaAs Microcones and Sharp Tips Prepared by Combining Electroless and Electrochemical Etching

Authors
Li, XiaopengUm, Han-DonJung, Jin-YoungSeo, Hong-SeokLee, Jung-Ho
Issue Date
Nov-2010
Publisher
Electrochemical Society, Inc.
Keywords
POROUS SILICON; III-V-SEMICONDUCTORS; MICROTIPS; FIELD-EMISSION; FABRICATION; MECHANISMS; PORES; ARRAYS
Citation
Journal of the Electrochemical Society, v.157, no.1, pp D1 - D4
Indexed
SCI
SCIE
SCOPUS
Journal Title
Journal of the Electrochemical Society
Volume
157
Number
1
Start Page
D1
End Page
D4
URI
https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/40506
DOI
10.1149/1.3244592
ISSN
0013-4651
1945-7111
Abstract
We developed a method for making triangular GaAs microcones with sharp tips by combining electroless and electrochemical etching. Silver nanoparticles were first uniformly distributed by electroless plating and were subsequently used as catalysts for generating a uniform shallow textured surface during chemical etching. The pretextured surface provided pore nucleation sites, allowing for easier further electrochemical etching with good uniformity. Adding H2O2 into the electrolyte caused pore widening with crystallographically oriented etching, which then resulted in GaAs microcones and sharp tips. The direction of pore growth was also observed to change from < 111 > B to < 111 > A at a high potential. Cone and sharp tip arrays prepared using this approach may have potential applications for photovoltaic and field-emission devices based upon III- V compounds. (C) 2009 The Electrochemical Society. [DOI: 10.1149/1.3244592] All rights reserved.
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ERICA 첨단융합대학 (ERICA 신소재·반도체공학전공)
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