Reduced Metal Contamination in Atomic-Layer-Deposited HfO2 Films Grown on Si Using O-3 Oxidant Generated Without N-2 Assistance
DC Field | Value | Language |
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dc.contributor.author | Park, Tae Joo | - |
dc.contributor.author | Chung, Keum Jee | - |
dc.contributor.author | Kim, Hyun-Chul | - |
dc.contributor.author | Ahn, Jinho | - |
dc.contributor.author | Wallace, Robert M. | - |
dc.contributor.author | Kim, Jiyoung | - |
dc.date.accessioned | 2021-06-23T14:37:33Z | - |
dc.date.available | 2021-06-23T14:37:33Z | - |
dc.date.created | 2021-01-21 | - |
dc.date.issued | 2010-05 | - |
dc.identifier.issn | 1099-0062 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/40518 | - |
dc.description.abstract | The physicochemical and electrical properties of atomic-layer-deposited HfO2 films grown using O-3 generated with and without N-2 assistance were examined. Compared to the films grown using conventionally generated O-3 with N-2 assistance, the HfO2 film grown using O-3 generated without N-2 assistance had less metal impurities (mainly Cr) possibly due to the etching of stainless ozone delivery line. This induced a higher physical density of the film and a lower Si concentration in the film, which resulted in enhanced dielectric properties and reliability such as dielectric breakdown and resistance to constant voltage stress. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3430657] All rights reserved. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | Electrochemical Society, Inc. | - |
dc.title | Reduced Metal Contamination in Atomic-Layer-Deposited HfO2 Films Grown on Si Using O-3 Oxidant Generated Without N-2 Assistance | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Tae Joo | - |
dc.identifier.doi | 10.1149/1.3430657 | - |
dc.identifier.scopusid | 2-s2.0-77953581332 | - |
dc.identifier.wosid | 000278694500019 | - |
dc.identifier.bibliographicCitation | Electrochemical and Solid-State Letters, v.13, no.8, pp.G65 - G67 | - |
dc.relation.isPartOf | Electrochemical and Solid-State Letters | - |
dc.citation.title | Electrochemical and Solid-State Letters | - |
dc.citation.volume | 13 | - |
dc.citation.number | 8 | - |
dc.citation.startPage | G65 | - |
dc.citation.endPage | G67 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Electrochemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Electrochemistry | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | H2O | - |
dc.subject.keywordAuthor | atomic layer deposition | - |
dc.subject.keywordAuthor | dielectric thin films | - |
dc.subject.keywordAuthor | electric breakdown | - |
dc.subject.keywordAuthor | elemental semiconductors | - |
dc.subject.keywordAuthor | etching | - |
dc.subject.keywordAuthor | hafnium compounds | - |
dc.subject.keywordAuthor | impurities | - |
dc.subject.keywordAuthor | oxidation | - |
dc.subject.keywordAuthor | silicon | - |
dc.subject.keywordAuthor | stainless steel | - |
dc.identifier.url | https://iopscience.iop.org/article/10.1149/1.3430657 | - |
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