SiNx Prepassivation of AlGaN/GaN High-Electron-Mobility Transistors Using Remote-Mode Plasma-Enhanced Chemical Vapor Deposition
- Authors
- Her, Jin-Cherl; Cho, Hyun-Jun; Yoo, Chan-Sei; Cha, Ho-Young; Oh, Jae-Eung; Seo, Kwang-Seok
- Issue Date
- Apr-2010
- Publisher
- IOP PUBLISHING LTD
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS, v.49, no.4
- Indexed
- SCIE
SCOPUS
- Journal Title
- JAPANESE JOURNAL OF APPLIED PHYSICS
- Volume
- 49
- Number
- 4
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/40562
- DOI
- 10.1143/JJAP.49.041002
- ISSN
- 0021-4922
- Abstract
- The surface of AlGaN/GaN high-electron-mobility transistors (HEMTs) tends to be easily damaged during device fabrication, especially during high-temperature annealing. In order to resolve this problem, a prepassivation process was developed using remote-mode plasma-enhanced chemical vapor deposition (RPECVD) systems. It is important in the prepassivation process to protect the region under the gate during high-temperature ohmic annealing and utilize a low-damage SiNx etching process to minimize any surface damage. It was observed that the DC characteristics were significantly improved and the current collapse phenomenon was markedly suppressed for AlGaN/GaN HEMTs by employing the prepassivation process proposed in this work in comparison with a conventional process. According to the experimental results, the prepassivation process coupled with a gate field plate successfully suppressed the current collapse phenomenon in AlGaN/GaN HEMTs. RF output power densities of 6.9 W/mm at 2.3 GHz and >8.9 W/mm at 4 GHz were achieved for AlGaN/GaN HEMTs on Si and SiC substrates, respectively. (C) 2010 The Japan Society of Applied Physics
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