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Determination of the Optical Properties of a Pellicle and Their Effects on High NA Lithography

Authors
Lee, SungjooJung, J.Rhim, JusangAn, Ilsin
Issue Date
Nov-2009
Publisher
한국물리학회
Keywords
Lithography; Photomask; Pellicle; Ellipsometry
Citation
Journal of the Korean Physical Society, v.55, no.5, pp 1772 - 1775
Pages
4
Indexed
SCIE
SCOPUS
KCI
Journal Title
Journal of the Korean Physical Society
Volume
55
Number
5
Start Page
1772
End Page
1775
URI
https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/40743
DOI
10.3938/jkps.55.1772
ISSN
0374-4884
1976-8524
Abstract
As the critical dimension in memory devices shrinks, various resolution-enhancement techniques are developed in optical lithography. Also, besides shortening wavelength, high numerical aperture NA lens systems and immersion techniques are employed. In these cases, the angle of incidence on the photomask side of the imaging lens increases. Thus, a non-normally transmitted or diffracted beam by the photomask and the underlying pellicle needs to be considered for optimized imaging. That is, non-normal transmission introduces an intensity variation over the incidence angle and a modification of the polarization states of exposure beam. In order to integrate these effects into lithography, we need to characterize the optical properties of the pellicle very well. In this study, we introduce a new method to obtain the optical constants of a thin pellicle membrane by using double transmission ellipsometry. In this method, the ellipsometric spectra are obtained from the transmission through the pellicle by using reflection from a reference sample in a conventional ellipsometry mode. Due to the double transmission and the high intensity signal, this method shows a higher sensitivity than conventional reflection ellipsometry.
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COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY > DEPARTMENT OF PHOTONICS AND NANOELECTRONICS > 1. Journal Articles

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