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Multilevel Programmable Oxide Diode for Cross-Point Memory by Electrical-Pulse-Induced Resistance Change
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, Ki Hwan | - |
| dc.contributor.author | Kang, Bo Soo | - |
| dc.contributor.author | Lee, Myoung-Jae | - |
| dc.contributor.author | Ahn, Seung-Eon | - |
| dc.contributor.author | Lee, Chang Bum | - |
| dc.contributor.author | Stefanovich, Genrikh | - |
| dc.contributor.author | Xianyu, Wen Xu | - |
| dc.contributor.author | Kim, Chang Jung | - |
| dc.contributor.author | Park, Youngsoo | - |
| dc.date.accessioned | 2021-06-23T15:02:58Z | - |
| dc.date.available | 2021-06-23T15:02:58Z | - |
| dc.date.created | 2021-01-21 | - |
| dc.date.issued | 2009-10 | - |
| dc.identifier.issn | 0741-3106 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/40857 | - |
| dc.description.abstract | A multilevel one-time programmable (OTP) oxide diode for cross-point memory is introduced. The oxide diode is composed of a thin-film p-CuO/n-InZnOx (IZO). By applying negative electrical pulses, the p-CuO/n-IZO diode exhibited multilevel resistance states, and such characteristics of the p-CuO/n-IZO diode could be utilized as the cell of OTP cross-point memory. The resistance-change properties of the p-CuO/n-IZO diode originated possibly from a back-to-back diode phenomenon by oxygen ion migration in the IZO thin film. | - |
| dc.language | 영어 | - |
| dc.language.iso | en | - |
| dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
| dc.title | Multilevel Programmable Oxide Diode for Cross-Point Memory by Electrical-Pulse-Induced Resistance Change | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | Kang, Bo Soo | - |
| dc.identifier.doi | 10.1109/LED.2009.2029247 | - |
| dc.identifier.scopusid | 2-s2.0-72049118178 | - |
| dc.identifier.wosid | 000270227600008 | - |
| dc.identifier.bibliographicCitation | IEEE ELECTRON DEVICE LETTERS, v.30, no.10, pp.1036 - 1038 | - |
| dc.relation.isPartOf | IEEE ELECTRON DEVICE LETTERS | - |
| dc.citation.title | IEEE ELECTRON DEVICE LETTERS | - |
| dc.citation.volume | 30 | - |
| dc.citation.number | 10 | - |
| dc.citation.startPage | 1036 | - |
| dc.citation.endPage | 1038 | - |
| dc.type.rims | ART | - |
| dc.type.docType | Article | - |
| dc.description.journalClass | 1 | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Engineering | - |
| dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
| dc.subject.keywordPlus | lectric resistance | - |
| dc.subject.keywordPlus | Oxygen | - |
| dc.subject.keywordPlus | Thin film devices | - |
| dc.subject.keywordPlus | Cross-point | - |
| dc.subject.keywordPlus | Electrical pulse | - |
| dc.subject.keywordPlus | Induced resistance | - |
| dc.subject.keywordPlus | Ion migration | - |
| dc.subject.keywordPlus | One-time programmables | - |
| dc.subject.keywordPlus | Resistance state | - |
| dc.subject.keywordAuthor | Cross-point | - |
| dc.subject.keywordAuthor | diode | - |
| dc.subject.keywordAuthor | memory | - |
| dc.subject.keywordAuthor | oxide | - |
| dc.identifier.url | https://ieeexplore.ieee.org/document/5233829 | - |
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Related Researcher
- Kang, Bo Soo
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY (DEPARTMENT OF APPLIED PHYSICS)