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Charge trap memory characteristic of Ge2Sb2Te5 nano-islands with high-k blocking oxides
Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 박태주 | - |
| dc.date.accessioned | 2021-06-23T15:05:34Z | - |
| dc.date.available | 2021-06-23T15:05:34Z | - |
| dc.date.issued | 2009-08 | - |
| dc.identifier.issn | 1099-0062 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/40972 | - |
| dc.format.extent | 1 | - |
| dc.publisher | Electrochemical Society, Inc. | - |
| dc.title | Charge trap memory characteristic of Ge2Sb2Te5 nano-islands with high-k blocking oxides | - |
| dc.type | Article | - |
| dc.publisher.location | 미국 | - |
| dc.identifier.bibliographicCitation | Electrochemical and Solid-State Letters, pp 0 - 0 | - |
| dc.citation.title | Electrochemical and Solid-State Letters | - |
| dc.citation.startPage | 0 | - |
| dc.citation.endPage | 0 | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | scopus | - |
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Related Researcher
- Park, Tae Joo
- ERICA 첨단융합대학 (ERICA 신소재·반도체공학전공)