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GaN LED의 웨이퍼 수준 EL 측정을 위한 전극 시뮬레이션
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 신동수 | - |
| dc.date.accessioned | 2021-06-23T15:38:34Z | - |
| dc.date.available | 2021-06-23T15:38:34Z | - |
| dc.date.created | 2021-02-18 | - |
| dc.date.issued | 2009-05-15 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/41199 | - |
| dc.description.abstract | We examine the electrical probes for the wafer-level electroluminescence (EL) measurements of GaN light-emitting diodes. By using a simulator based on the 3-dimensional circuit analysis, we investigate various probe gaps and shapes to find the optimum probe parameters for an efficient wafer-level EL system. | - |
| dc.publisher | 한국광학회 | - |
| dc.title | GaN LED의 웨이퍼 수준 EL 측정을 위한 전극 시뮬레이션 | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | 신동수 | - |
| dc.identifier.bibliographicCitation | 제16회 광전자 및 광통신 학술회의 논문집 | - |
| dc.relation.isPartOf | 제16회 광전자 및 광통신 학술회의 논문집 | - |
| dc.citation.title | 제16회 광전자 및 광통신 학술회의 논문집 | - |
| dc.type.rims | ART | - |
| dc.description.journalClass | 3 | - |
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Related Researcher
- Shin, Dong Soo
- ERICA 첨단융합대학 (ERICA 반도체·디스플레이공학전공)