Electrical Manipulation of Nanofilaments in Transition-Metal Oxides for Resistance-Based Memory
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Myoung-Jae | - |
dc.contributor.author | Han, Seungwu | - |
dc.contributor.author | Jeon, Sang Ho | - |
dc.contributor.author | Park, Bae Ho | - |
dc.contributor.author | Kang, Bo Soo | - |
dc.contributor.author | Ahn, Seung-Eon | - |
dc.contributor.author | Kim, Ki Hwan | - |
dc.contributor.author | Lee, Chang Bum | - |
dc.contributor.author | Kim, Chang Jung | - |
dc.contributor.author | Yoo, In-Kyeong | - |
dc.contributor.author | Seo, David H. | - |
dc.contributor.author | Li, Xiang-Shu | - |
dc.contributor.author | Park, Jong-Bong | - |
dc.contributor.author | Lee, Jung-Hyun | - |
dc.contributor.author | Park, Youngsoo | - |
dc.date.accessioned | 2021-06-23T15:40:30Z | - |
dc.date.available | 2021-06-23T15:40:30Z | - |
dc.date.created | 2021-01-21 | - |
dc.date.issued | 2009-04 | - |
dc.identifier.issn | 1530-6984 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/41315 | - |
dc.description.abstract | The fabrication of controlled nanostructures such as quantum dots, nanotubes, nanowires, and nanopillars has progressed rapidly over the past 10 years. However, both bottom-up and top-down methods to integrate the nanostructures are met with several challenges. For practical applications with the high level of the integration, an approach that can fabricate the required structures locally is desirable. In addition, the electrical signal to construct and control the nanostructures can provide significant advantages toward the stability and ordering. Through experiments on the negative resistance switching phenomenon in Pt-NiO-Pt structures, we have fabricated nanofilament channels that can be electrically connected or disconnected. Various analyses indicate that the nanofilaments are made of nickel and are formed at the grain boundaries. The scaling behaviors of the nickel nanofilaments were closely examined, with respect to the switching time, power, and resistance. In particular, the 100 nm x 100 nm cell was switchable on the nanosecond scale, making them ideal for the basis for high-speed, high-density, nonvolatile memory applications. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Electrical Manipulation of Nanofilaments in Transition-Metal Oxides for Resistance-Based Memory | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kang, Bo Soo | - |
dc.identifier.doi | 10.1021/nl803387q | - |
dc.identifier.scopusid | 2-s2.0-65249161894 | - |
dc.identifier.wosid | 000265030000036 | - |
dc.identifier.bibliographicCitation | NANO LETTERS, v.9, no.4, pp.1476 - 1481 | - |
dc.relation.isPartOf | NANO LETTERS | - |
dc.citation.title | NANO LETTERS | - |
dc.citation.volume | 9 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 1476 | - |
dc.citation.endPage | 1481 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | Electric wire | - |
dc.subject.keywordPlus | Grain boundaries | - |
dc.subject.keywordPlus | Nickel alloys | - |
dc.subject.keywordPlus | Platinum | - |
dc.subject.keywordPlus | Semiconductor quantum dots | - |
dc.subject.keywordPlus | Transition metals | - |
dc.subject.keywordPlus | Bottom up and top downs | - |
dc.subject.keywordPlus | Electrical manipulations | - |
dc.subject.keywordPlus | Electrical signals | - |
dc.subject.keywordPlus | High densities | - |
dc.subject.keywordPlus | High-speed | - |
dc.subject.keywordPlus | Nanofilaments | - |
dc.subject.keywordPlus | Nanopillars | - |
dc.subject.keywordPlus | Non-volatile memory applications | - |
dc.subject.keywordPlus | Quantum dots | - |
dc.subject.keywordPlus | Resistance switching | - |
dc.subject.keywordPlus | Scaling behaviors | - |
dc.subject.keywordPlus | Switchable | - |
dc.subject.keywordPlus | Switching time | - |
dc.subject.keywordPlus | Transition metal-oxides | - |
dc.identifier.url | https://pubs.acs.org/doi/10.1021/nl803387q | - |
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