Impact of Polarization Inside a Resist for ArF Immersion Lithography
- Authors
- Kim, Sang-Kon; Oh, Hye-Keum; Jung, Young-Dae; An, Ilsin
- Issue Date
- Apr-2009
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- Lithography; Lithography simulation; Immersion lithography; Finite-difference time domain; Polarization
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.54, no.4, pp.1685 - 1691
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 54
- Number
- 4
- Start Page
- 1685
- End Page
- 1691
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/41316
- DOI
- 10.3938/jkps.54.1685
- ISSN
- 0374-4884
- Abstract
- Immersion technology with new lens materials and new high-refractive fluids is the key technology to extend the resolution capability of existing 193-nm lithography below the 32-nm pattern formation, but it faces more pronounced polarization and reflection control issues. In this paper, for a wet system, the propagations of the transverse electric (TE) and the transverse magnetic (TM) waves inside a one-layer resist and a multi-layer resist are described by using the finite-difference-time-domain (FDTD) method with a multi-layer model and a transfer-matrix model, respectively. In the comparison with a dry system, the TE and the TM modes of the wet system are larger than those of the dry system. Inside the multi-layer resist, the TM and the TE modes change little at incident angle below 20 degrees. However, for a 45-nm pattern formation, no difference between the TM and the TE modes is found under the given conditions for incident angles below 20 degrees.
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Collections - COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY > DEPARTMENT OF PHOTONICS AND NANOELECTRONICS > 1. Journal Articles
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY > DEPARTMENT OF APPLIED PHYSICS > 1. Journal Articles
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