SAM modification of CMP conditioner for the prevention of particle adhesion
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kwon, Tae Young | - |
dc.contributor.author | Kang, Young-Jae | - |
dc.contributor.author | Kim, In-Kwon | - |
dc.contributor.author | Kim, Dong Chan | - |
dc.contributor.author | Kim, Jeong | - |
dc.contributor.author | Chun, Jong sun | - |
dc.contributor.author | Park, Mun seak | - |
dc.contributor.author | Park, Jin-Goo | - |
dc.date.accessioned | 2021-06-23T16:39:33Z | - |
dc.date.available | 2021-06-23T16:39:33Z | - |
dc.date.created | 2021-01-22 | - |
dc.date.issued | 2009 | - |
dc.identifier.issn | 1938-5862 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/41802 | - |
dc.description.abstract | Pad conditioning is a necessary step during CMP (Chemical Mechanical Planarization) process to maintain the performance such as uniform material removal rate and its uniformity. The Ni electroplated diamond conditioner has been used and its surface could be easily contaminated by slurry particles and by-products during conditioning. We have proposed the hydrophobic SAM (self assembled monolayer) modification to CMP conditioner to reduce residue contamination. After CMP conditioning process, the contamination was reduced highly on the surface of the conditioner when it was coated with hydrophobic film. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | Electrochemical Society, Inc. | - |
dc.title | SAM modification of CMP conditioner for the prevention of particle adhesion | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Jin-Goo | - |
dc.identifier.doi | 10.1149/1.3202640 | - |
dc.identifier.scopusid | 2-s2.0-74949088658 | - |
dc.identifier.wosid | 000337745400011 | - |
dc.identifier.bibliographicCitation | ECS Transactions, v.25, no.5, pp.95 - 99 | - |
dc.relation.isPartOf | ECS Transactions | - |
dc.citation.title | ECS Transactions | - |
dc.citation.volume | 25 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | 95 | - |
dc.citation.endPage | 99 | - |
dc.type.rims | ART | - |
dc.type.docType | Conference Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Electrochemistry | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Electrochemistry | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | Chemical mechanical planarizations | - |
dc.subject.keywordPlus | Conditioning process | - |
dc.subject.keywordPlus | Hydrophobic film | - |
dc.subject.keywordPlus | Material removal rate | - |
dc.subject.keywordPlus | Pad conditioning | - |
dc.subject.keywordPlus | Particle adhesion | - |
dc.subject.keywordPlus | Slurry particles | - |
dc.subject.keywordPlus | Chemical mechanical polishing | - |
dc.subject.keywordPlus | Electroplated products | - |
dc.subject.keywordPlus | Hydrophobicity | - |
dc.subject.keywordPlus | Monolayers | - |
dc.subject.keywordPlus | Nanotechnology | - |
dc.subject.keywordPlus | Semiconductor device manufacture | - |
dc.subject.keywordPlus | Semiconductor switches | - |
dc.subject.keywordPlus | Surfaces | - |
dc.subject.keywordPlus | Surface cleaning | - |
dc.identifier.url | https://iopscience.iop.org/article/10.1149/1.3202640 | - |
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