A novel photovoltaic nanodevice based on the co-integration of silicon micro and nanowires prepared by electroless etching with conformal plasma doping
- Authors
- Um, Han Don; Jung, Jin Young; Li, Xiaopeng; Jee, Sang Won; Park, Kwang Tae; Seo, Hong Seok; Moiz, Syed Abdul; Lee, Sang Wook; Ji, Jong Yeoul; Kim, Chung Tae; Hyun, Moom Seop; Park, Yun Chang; Yang, Jun Mo; Lee, Jung Ho
- Issue Date
- 2009
- Publisher
- IEEE
- Keywords
- Plasma doping; Conversion efficiency; In-between; P-n junction; Wire arrays; Micro wire; Semiconductor junctions; Wire; Dense arrays; Wet etching; Cointegration; Anti-reflection; Integrated nanostructures; Silicon; Electroless; Nanowires; Nano device; Ele
- Citation
- Technical Digest - International Electron Devices Meeting, IEDM, pp.22.7.1 - 22.7.4
- Indexed
- SCIE
SCOPUS
- Journal Title
- Technical Digest - International Electron Devices Meeting, IEDM
- Start Page
- 22.7.1
- End Page
- 22.7.4
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/41808
- DOI
- 10.1109/IEDM.2009.5424298
- ISSN
- 0163-1918
- Abstract
- Periodically patterned co-integration of silicon microwires (MWs) and nanowires (NWs) were applied for a novel photovoltaic (PV) nanodevice. The optical improvement due to antireflection enhancement with a graded-refractive-index (GRI) effect (see Fig. 1) was observed by employing the tapered NWs. Si MWs that formed a radial p-n junction were located in between the dense array of Si NWs. These wire arrays were cost-effectively defined by metal-assisted electroless wet etching. The co-integrated nanostructure of Si NWs and MWs demonstrated a high short circuit current (Jsc) and cell conversion efficiency (CE) compared to a sole array of Si NWs or MWs. Highest values of Jsc and CE at 1.5AM illumination were recorded as 24.89 mA/cm2 and 8.45%, respectively, which have been champion data reported to date in wire based PV cells using a radial p-n junction. © 2009 IEEE.
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