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Temperature compensating bias circuit for GaAsHBT RF power amplifiers with stage bypass architecture

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dc.contributor.authorJeon, J.-
dc.contributor.authorKim, J.-
dc.contributor.authorKwon, Y.-
dc.date.accessioned2021-06-23T17:05:30Z-
dc.date.available2021-06-23T17:05:30Z-
dc.date.created2021-01-21-
dc.date.issued2008-09-
dc.identifier.issn0013-5194-
dc.identifier.urihttps://scholarworks.bwise.kr/erica/handle/2021.sw.erica/42195-
dc.description.abstractThe design of a temperature compensating bias circuit applicable to GaAs HBT radio frequency (RF) power amplifiers (PAs) is presented. It is developed by adding a simple voltage-compensation circuit to the existing base bias circuit. It is applied to a stage bypass RF PA and the experimental results show that the quiescent current (Q-current) remains nearly unchanged over a temperature range between 230-85 degrees C, which markedly improves the linearity of the PA at low temperatures.-
dc.language영어-
dc.language.isoen-
dc.publisherINST ENGINEERING TECHNOLOGY-IET-
dc.titleTemperature compensating bias circuit for GaAsHBT RF power amplifiers with stage bypass architecture-
dc.typeArticle-
dc.contributor.affiliatedAuthorKim, J.-
dc.identifier.doi10.1049/el:20080769-
dc.identifier.scopusid2-s2.0-51549093364-
dc.identifier.wosid000259155000026-
dc.identifier.bibliographicCitationELECTRONICS LETTERS, v.44, no.19, pp.1141 - 1142-
dc.relation.isPartOfELECTRONICS LETTERS-
dc.citation.titleELECTRONICS LETTERS-
dc.citation.volume44-
dc.citation.number19-
dc.citation.startPage1141-
dc.citation.endPage1142-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.identifier.urlhttps://www.proquest.com/docview/1627987117?pq-origsite=gscholar&fromopenview=true-
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ERICA 공학대학 (SCHOOL OF ELECTRICAL ENGINEERING)
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