High-current-density CuOx/ZnOx thin-film diodes for cross-point memory applications
DC Field | Value | Language |
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dc.contributor.author | Kang, Bo Soo | - |
dc.contributor.author | Ahn, Seung-Eon | - |
dc.contributor.author | Lee, Myoung-Jae | - |
dc.contributor.author | Stefanovich, Genrikh | - |
dc.contributor.author | Kim, Ki Hwan | - |
dc.contributor.author | Xianyu, Wen Xu | - |
dc.contributor.author | Lee, Chang Bum | - |
dc.contributor.author | Park, Youngsoo | - |
dc.contributor.author | Baek, In Gyu | - |
dc.contributor.author | Park, Bae Ho | - |
dc.date.accessioned | 2021-06-23T17:06:15Z | - |
dc.date.available | 2021-06-23T17:06:15Z | - |
dc.date.issued | 2008-08 | - |
dc.identifier.issn | 0935-9648 | - |
dc.identifier.issn | 1521-4095 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/42235 | - |
dc.description.abstract | Room-temperature-deposited CuOx/InZnOx thin-film heteroJunction diodes show a high current density of 3.5 X 10(4) A cm(-2) and a high on/off current ratio of 10(6) (see figure). The oxide diode is a promising switch element for three-dimensional stackable memory devices, where high-temperature-prepared silicon diodes are difficult to apply. | - |
dc.format.extent | 4 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | WILEY-V C H VERLAG GMBH | - |
dc.title | High-current-density CuOx/ZnOx thin-film diodes for cross-point memory applications | - |
dc.type | Article | - |
dc.publisher.location | 독일 | - |
dc.identifier.doi | 10.1002/adma.200702932 | - |
dc.identifier.wosid | 000258791500018 | - |
dc.identifier.bibliographicCitation | ADVANCED MATERIALS, v.20, no.16, pp 3066 - 3069 | - |
dc.citation.title | ADVANCED MATERIALS | - |
dc.citation.volume | 20 | - |
dc.citation.number | 16 | - |
dc.citation.startPage | 3066 | - |
dc.citation.endPage | 3069 | - |
dc.type.docType | Article | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | CURRENT-VOLTAGE CHARACTERISTICS | - |
dc.subject.keywordPlus | OXIDE | - |
dc.subject.keywordPlus | TRANSPARENT | - |
dc.subject.keywordPlus | RESISTANCE | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordAuthor | CURRENT-VOLTAGE CHARACTERISTICS | - |
dc.subject.keywordAuthor | LOW-TEMPERATURE | - |
dc.subject.keywordAuthor | OXIDE-FILMS | - |
dc.subject.keywordAuthor | TRANSPARENT | - |
dc.subject.keywordAuthor | RESISTANCE | - |
dc.subject.keywordAuthor | FABRICATION | - |
dc.identifier.url | https://onlinelibrary.wiley.com/doi/10.1002/adma.200702932 | - |
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