Synthesis and characterization of cadmium telluride nanowire
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kum, Maxwell C. | - |
dc.contributor.author | Yoo, Bong Young | - |
dc.contributor.author | Rheem, YoungWoo | - |
dc.contributor.author | Bozhilov, Krassimir N. | - |
dc.contributor.author | Chen, Wilfred | - |
dc.contributor.author | Mulchandani, Ashok | - |
dc.contributor.author | Myung, Nosang V. | - |
dc.date.accessioned | 2021-06-23T17:06:22Z | - |
dc.date.available | 2021-06-23T17:06:22Z | - |
dc.date.created | 2021-01-21 | - |
dc.date.issued | 2008-08 | - |
dc.identifier.issn | 0957-4484 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/42238 | - |
dc.description.abstract | CdTe nanowires with controlled composition were cathodically electrodeposited using track-etched polycarbonate membrane as scaffolds and their material and electrical properties were systematically investigated. As-deposited CdTe nanowires show nanocrystalline cubic phase structures with grain sizes of up to 60 nm. The dark-field images of nanowires reveal that the crystallinity of nanowires was greatly improved from nanocrystalline to a few single crystals within nanowires upon annealing at 200 circle C for 6 h in a reducing environment (5% H-2 + 95% N-2). For electrical characterization, a single CdTe nanowire was assembled across microfabricated gold electrodes using the drop-casting method. In addition to an increase in grain size, the electrical resistivity of an annealed single nanowire (a few 10(5) Omega cm) was one order of magnitude greater than in an as-deposited nanowire, indicating that crystallinity of nanowires improved and defects within nanowires were reduced during annealing. By controlling the dopants levels (e. g. Te content of nanowires), the resistivity of nanowires was varied from 10(4) to 10(0) Omega cm. Current-voltage (I-V) characteristics of nanowires indicated the presence of Schottky barriers at both ends of the Au/CdTe interface. Temperature-dependent I-V measurements show that the electron transport mode was determined by a thermally activated component at T > -50 circle C and a temperature-independent component below -50 circle C. Under optical illumination, the single CdTe nanowire exhibited enhanced conductance. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | Institute of Physics Publishing | - |
dc.title | Synthesis and characterization of cadmium telluride nanowire | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Yoo, Bong Young | - |
dc.identifier.doi | 10.1088/0957-4484/19/32/325711 | - |
dc.identifier.scopusid | 2-s2.0-47249121634 | - |
dc.identifier.wosid | 000257370600029 | - |
dc.identifier.bibliographicCitation | Nanotechnology, v.19, no.32, pp.1 - 7 | - |
dc.relation.isPartOf | Nanotechnology | - |
dc.citation.title | Nanotechnology | - |
dc.citation.volume | 19 | - |
dc.citation.number | 32 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 7 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | SEMICONDUCTOR NANOWIRES | - |
dc.subject.keywordPlus | DETECTOR MATERIAL | - |
dc.subject.keywordPlus | CHARGE-TRANSPORT | - |
dc.subject.keywordPlus | METAL NANOWIRES | - |
dc.subject.keywordPlus | SCHOTTKY DIODES | - |
dc.subject.keywordPlus | CDTE NANOWIRES | - |
dc.subject.keywordPlus | ELECTRODEPOSITION | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | DEPOSITION | - |
dc.subject.keywordPlus | ALUMINUM | - |
dc.subject.keywordAuthor | SEMICONDUCTOR NANOWIRES | - |
dc.subject.keywordAuthor | DETECTOR MATERIAL | - |
dc.subject.keywordAuthor | CHARGE-TRANSPORT | - |
dc.subject.keywordAuthor | METAL NANOWIRES | - |
dc.subject.keywordAuthor | SCHOTTKY DIODES | - |
dc.subject.keywordAuthor | CDTE NANOWIRES | - |
dc.subject.keywordAuthor | ELECTRODEPOSITION | - |
dc.subject.keywordAuthor | FILMS | - |
dc.subject.keywordAuthor | DEPOSITION | - |
dc.subject.keywordAuthor | ALUMINUM | - |
dc.identifier.url | https://iopscience.iop.org/article/10.1088/0957-4484/19/32/325711 | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
55 Hanyangdeahak-ro, Sangnok-gu, Ansan, Gyeonggi-do, 15588, Korea+82-31-400-4269 sweetbrain@hanyang.ac.kr
COPYRIGHT © 2021 HANYANG UNIVERSITY. ALL RIGHTS RESERVED.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.